Design of GaN-based X-band LNAs to achieve sub-1.2 dB noise figure

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buir.contributor.authorZafar, Salahuddin
buir.contributor.authorAras, Erdem
buir.contributor.authorCankaya Akoglu, Busra
buir.contributor.authorTendurus, Gizem
buir.contributor.authorNawaz, Muhammad Imran
buir.contributor.authorOzbay, Ekmel
buir.contributor.orcidZafar, Salahuddin|0000-0002-5212-9602
buir.contributor.orcidAras, Erdem|0000-0001-8291-8509
buir.contributor.orcidCankaya Akoglu, Busra|0000-0001-5680-1649
buir.contributor.orcidTendurus, Gizem|0000-0003-2070-1501
buir.contributor.orcidNawaz, Muhammad Imran|0000-0002-8497-6275
buir.contributor.orcidOzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage13en_US
dc.citation.issueNumber11en_US
dc.citation.spage1en_US
dc.citation.volumeNumber32en_US
dc.contributor.authorZafar, Salahuddin
dc.contributor.authorAras, Erdem
dc.contributor.authorCankaya Akoglu, Busra
dc.contributor.authorTendurus, Gizem
dc.contributor.authorNawaz, Muhammad Imran
dc.contributor.authorKashif, Ahsanullah
dc.contributor.authorOzbay, Ekmel
dc.date.accessioned2023-02-22T13:46:13Z
dc.date.available2023-02-22T13:46:13Z
dc.date.issued2022-08-21
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractGaAs and SiGe technologies take an edge over GaN-based devices in terms of better noise figure (NF). In this article, we present HEMT topologies and design techniques to achieve a sub-1.2 dB NF for a GaN-based X-band low-noise amplifier (LNA). This NF is comparable with state-of-the-art reported works in competitive GaAs and SiGe technologies. Moreover, this is the best reported NF in X-band using GaN technology to date. Two LNAs are fabricated using in-house 0.15 μm AlGaN/GaN on the SiC HEMT process. LNA-1 has inductive source degenerated (ISD) HEMTs at both stages, while LNA-2 has ISD HEMT at the first and common source at the second stage. The significance of ISD HEMT, for the first or subsequent stages in a multi-stage design, towards NF improvement is addressed. The criticality of stability networks towards NF contribution and its design is discussed in detail. Furthermore, even-mode stability of each HEMT after complete LNA design is assured using the S-probe method in Pathwave Advanced Design Systems.en_US
dc.identifier.doi10.1002/mmce.23379en_US
dc.identifier.eisbn1099-047X
dc.identifier.issn1096-4290
dc.identifier.urihttp://hdl.handle.net/11693/111613
dc.language.isoEnglishen_US
dc.publisherWileyen_US
dc.relation.isversionofhttps://dx.doi.org/en_US
dc.source.titleInternational Journal of RF and Microwave Computer-Aided Engineeringen_US
dc.subjectEven-mode stabilityen_US
dc.subjectGaN-on-SiCen_US
dc.subjectInductive source degenerationen_US
dc.subjectLow-noise amplifieren_US
dc.titleDesign of GaN-based X-band LNAs to achieve sub-1.2 dB noise figureen_US
dc.typeArticleen_US

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