Design of an X-band GaN based microstrip MMIC power amplifier

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buir.advisorÖzbay, Ekmel
dc.contributor.authorÖzipek, Ulaş
dc.date.accessioned2019-02-21T11:39:26Z
dc.date.available2019-02-21T11:39:26Z
dc.date.copyright2019-02
dc.date.issued2019-02
dc.date.submitted2019-02-20
dc.descriptionCataloged from PDF version of article.en_US
dc.descriptionThesis (M.S.) : Bilkent University, Department of Electrical and Electronics Engineering, İhsan Doğramacı Bilkent University, 2019.en_US
dc.descriptionIncludes bibliographical references (leaves 75-78).en_US
dc.description.abstractRF power amplifiers are crucial components of modern radar and communication systems. However, their design poses some challenges due to device limitations in high power and high frequency regime, as well as inherent difficulties of designing for nonlinear large-signal device operation. Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMT) are promising candidates due to their superior material qualities, high power densities and ability to operate up to mm-wave frequencies. In this thesis, 0.25 μm GaN on SiC microfabrication process of Bilkent University Nanotechnology Research Center (NANOTAM) is presented. Transistor characterization procedure is demonstrated. Ideal transistor layout for design goals is selected and the transistor gate structure is optimized for X-band performance. A model library for microstrip passive circuit elements based on electromagnetic simulations has been developed. Finally, design and measurements of an X-band microstrip Class AB two-stage Monolithic Microwave Integrated Circuit (MMIC) PA, based on the same process are presented in detail. With die sizes smaller than 4.3 mm by 2.3 mm, fabricated MMICs operate at 8.5 - 11.5 GHz band with 24 dB small-signal gain. More than 13.5 W (41.3 dBm) output power (P6dB) and 31 - 38 % power-added efficiency are achieved throughout the 8.5 - 11 GHz band in pulsed mode on-wafer measurements.en_US
dc.description.provenanceSubmitted by Betül Özen (ozen@bilkent.edu.tr) on 2019-02-21T11:39:26Z No. of bitstreams: 1 Ulas_Ozipek_Master_Thesis.pdf: 22291337 bytes, checksum: c1baa6a770bc366e2f4621d620525a78 (MD5)en
dc.description.provenanceMade available in DSpace on 2019-02-21T11:39:26Z (GMT). No. of bitstreams: 1 Ulas_Ozipek_Master_Thesis.pdf: 22291337 bytes, checksum: c1baa6a770bc366e2f4621d620525a78 (MD5) Previous issue date: 2019-02en
dc.description.statementofresponsibilityby Ulaş Özipeken_US
dc.format.extentxvi, 78 leaves : illustrations, charts (some color) ; 30 cm.en_US
dc.identifier.itemidB159708
dc.identifier.urihttp://hdl.handle.net/11693/49637
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGallium nitrideen_US
dc.subjectMMICen_US
dc.subjectMicrowaveen_US
dc.subjectX-banden_US
dc.subjectPower amplifieren_US
dc.titleDesign of an X-band GaN based microstrip MMIC power amplifieren_US
dc.title.alternativeX-bant GaN tabanlı mikroşerit MMIC güç yükseltecien_US
dc.typeThesisen_US
thesis.degree.disciplineElectrical and Electronic Engineering
thesis.degree.grantorBilkent University
thesis.degree.levelMaster's
thesis.degree.nameMS (Master of Science)

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