Optical studies of molecular beam epitaxy grown GaAsSbN / GaAs single quantum well structures
dc.citation.epage | 1116 | en_US |
dc.citation.issueNumber | 3 | en_US |
dc.citation.spage | 1113 | en_US |
dc.citation.volumeNumber | 25 | en_US |
dc.contributor.author | Nunna, K. | en_US |
dc.contributor.author | Iyer, S. | en_US |
dc.contributor.author | Wu, L. | en_US |
dc.contributor.author | Bharatan, S. | en_US |
dc.contributor.author | Li J. | en_US |
dc.contributor.author | Bajaj, K. K. | en_US |
dc.contributor.author | Wei, X. | en_US |
dc.contributor.author | Senger, R. T. | en_US |
dc.date.accessioned | 2016-02-08T10:14:00Z | |
dc.date.available | 2016-02-08T10:14:00Z | |
dc.date.issued | 2007 | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | In this work, the authors present a systematic study on the variation of the structural and the optical properties of GaAsSbNGaAs single quantum wells (SQWs) as a function of nitrogen concentration. These SQW layers were grown by the solid source molecular beam epitaxial technique. A maximum reduction of 328 meV in the photoluminescence (PL) peak energy of GaAsSbN was observed with respect to the reference GaAsSb QW. 8 K and RT PL peak energies of 0.774 eV (FWHM of ∼25 meV) and 0.729 eV (FWHM of ∼67 meV) (FWHM denotes full width at half maximum) corresponding to the emission wavelengths of 1.6 and 1.7 μm, respectively, have been achieved for a GaAsSbN SQW of N∼1.4%. The pronounced S -curve behavior of the PL spectra at low temperatures is a signature of exciton localization, which is found to decrease from 16 to 9 meV with increasing N concentration of 0.9%-2.5%. The diamagnetic shift of 13 meV observed in the magnetophotoluminescence spectra of the nitride sample with N∼1.4% is smaller in comparison to the value of 28 meV in the non-nitride sample, indicative of an enhancement in the electron effective mass in the nitride QWs. Electron effective mass of 0.065 mo has been estimated for a SQW with N∼1.4% using the band anticrossing model. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T10:14:00Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2007 | en |
dc.identifier.doi | 10.1116/1.2720860 | en_US |
dc.identifier.issn | 1071-1023 | |
dc.identifier.uri | http://hdl.handle.net/11693/23442 | |
dc.language.iso | English | en_US |
dc.publisher | A I P Publishing LLC | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1116/1.2720860 | en_US |
dc.source.title | Journal of Vacuum Science and Technology B : Microelectronics and Nanometer Structures | en_US |
dc.subject | Molecular beam epitaxy | en_US |
dc.subject | Nitrogen | en_US |
dc.subject | Optical properties | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Semiconducting gallium compounds | en_US |
dc.subject | Diamagnetic shift | en_US |
dc.subject | Magnetophotoluminescence | en_US |
dc.subject | Nitrogen concentration | en_US |
dc.subject | Single quantum well structures | en_US |
dc.subject | Semiconductor quantum wells | en_US |
dc.title | Optical studies of molecular beam epitaxy grown GaAsSbN / GaAs single quantum well structures | en_US |
dc.type | Article | en_US |
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