Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

buir.contributor.authorAydınlı, Atilla
dc.citation.epage315en_US
dc.citation.spage308en_US
dc.citation.volumeNumber104en_US
dc.contributor.authorBahariqushchi, Rahimen_US
dc.contributor.authorGündoğdu, Sinanen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2018-04-12T11:10:10Z
dc.date.available2018-04-12T11:10:10Z
dc.date.issued2017en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractMultilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.en_US
dc.embargo.release2019-04-01en_US
dc.identifier.doi10.1016/j.spmi.2017.02.037en_US
dc.identifier.issn0749-6036
dc.identifier.urihttp://hdl.handle.net/11693/37323
dc.language.isoEnglishen_US
dc.publisherAcademic Pressen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.spmi.2017.02.037en_US
dc.source.titleSuperlattices and Microstructuresen_US
dc.titleGe nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriersen_US
dc.typeArticleen_US

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