Improving the efficiency enhancement of photonic crystal based InGaN solar cell by using a GaN Cap Layer

Simple item page
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.volumeNumber2014en_US
dc.contributor.authorGundogdu, T.F.en_US
dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T11:01:16Z
dc.date.available2016-02-08T11:01:16Z
dc.date.issued2014en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractWe studied a high indium content (0.8) InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a 50% enhancement of the short-circuit current density for a 15 nm-thick InGaN layer. © 2014 T. F. Gundogdu et al.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:01:16Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2014en
dc.identifier.doi10.1155/2014/605204en_US
dc.identifier.issn16878434
dc.identifier.urihttp://hdl.handle.net/11693/26538
dc.language.isoEnglishen_US
dc.publisherHindawi Publishing Corporationen_US
dc.relation.isversionofhttp://dx.doi.org/10.1155/2014/605204en_US
dc.source.titleAdvances in Materials Science and Engineeringen_US
dc.subjectGallium nitrideen_US
dc.subjectCap layersen_US
dc.subjectEfficiency enhancementen_US
dc.subjectGaN cap layersen_US
dc.subjectHigh indium contentsen_US
dc.subjectSolar cell designen_US
dc.subjectSpacer layeren_US
dc.subjectSolar cellsen_US
dc.titleImproving the efficiency enhancement of photonic crystal based InGaN solar cell by using a GaN Cap Layeren_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Improving the efficiency enhancement of photonic crystal based InGaN solar cell by using a GaN Cap Layer.pdf
Size:
2.56 MB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download

Collections

Scholarly Publications - Electrical and Electronics Engineering