Defect luminescence in some layered binary chalcogenide semiconductors
Date
2002
Authors
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Defect and Diffusion Forum
Print ISSN
1012-0386
Electronic ISSN
1662-9507
Publisher
Scientific.Net
Volume
210-212
Issue
Pages
61 - 70
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
A number of semiconductors such as GaS, GaSe, GaSSe show layered structure where intralayer bonding is strong and interlayer bonding quite weak. With bandgaps mostly in the visible and the near infrared and high crystal structure anisotropy, such semiconductors offer interesting possibilities for optoelectronic applications In this review, we will summarize the recent developments on the photoluminescent properties of these materials such as luminescence due to donor-acceptor pair recombination. As these materials are undoped, the observed photoluminescence is attributed mostly to defect states present in these materials.