Analytic modeling of loss and cross-coupling in capacitive micromachined ultrasonic transducers

buir.contributor.orcidAtalar, Abdullah|0000-0002-1903-1240
dc.citation.epage1028en_US
dc.citation.spage1025en_US
dc.citation.volumeNumber2en_US
dc.contributor.authorBozkurt, A.en_US
dc.contributor.authorDegertekin, F. L.en_US
dc.contributor.authorAtalar, Abdullahen_US
dc.contributor.authorKhuri-Yakub, B. T.en_US
dc.date.accessioned2016-02-08T10:43:03Z
dc.date.available2016-02-08T10:43:03Z
dc.date.issued1998en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe structural loss mechanism of capacitive micromachined ultrasonic transducer (cMUT) is investigated using finite element analysis and the normal mode theory. A single micromachined transducer membrane on an infinite silicon substrate is simulated by incorporating absorbing boundary conditions in the finite element method. This enables direct evaluation of the mechanical impedance of the membrane. Furthermore, the field distribution along the thickness of the silicon substrate due to outward radiating wave modes is obtained. The normal mode theory is applied to extract the contributions of different wave modes to the complicated field distributions. It is found that, the lowest order Lamb wave modes are responsible for the loss. Evaluation of absolute and relative power losses due to individual modes indicate that the lowest order anti-symmetric (A0) mode is the dominant radial mode in agreement with experimental measurements. The results of the analysis are used to derive a detailed equivalent circuit model of a cMUT with structural loss.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:43:03Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1998en
dc.identifier.doi10.1109/ULTSYM.1998.764979en_US
dc.identifier.issn1051-0117
dc.identifier.urihttp://hdl.handle.net/11693/25332
dc.language.isoEnglishen_US
dc.publisherIEEE, Piscataway, NJ, United Statesen_US
dc.relation.isversionofhttp://doi.org/10.1109/ULTSYM.1998.764979en_US
dc.source.titleProceedings of the IEEE Ultrasonics Symposiumen_US
dc.subjectBoundary conditionsen_US
dc.subjectCapacitorsen_US
dc.subjectComputer simulationen_US
dc.subjectElectric fieldsen_US
dc.subjectElectric lossesen_US
dc.subjectEquivalent circuitsen_US
dc.subjectFinite element methoden_US
dc.subjectMathematical modelsen_US
dc.subjectSilicon sensorsen_US
dc.subjectCapacitive micromachined ultrasonic transducers (CMUT)en_US
dc.subjectCross couplingen_US
dc.subjectUltrasonic transducersen_US
dc.titleAnalytic modeling of loss and cross-coupling in capacitive micromachined ultrasonic transducersen_US
dc.typeArticleen_US

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