Impedance-type measurements using XPS

buir.contributor.authorSüzer, Şefik
dc.citation.epage1298en_US
dc.citation.issueNumber5en_US
dc.citation.spage1296en_US
dc.citation.volumeNumber256en_US
dc.contributor.authorSüzer, Şefiken_US
dc.contributor.authorAbelev, E.en_US
dc.contributor.authorBernasek, S. L.en_US
dc.date.accessioned2015-07-28T11:58:41Z
dc.date.available2015-07-28T11:58:41Z
dc.date.issued2009en_US
dc.departmentDepartment of Chemistryen_US
dc.description.abstractAn impedance type of measurement using X-ray photoelectron spectroscopy is applied for probing charging/discharging dynamics of a sample containing Rb deposited on a SiO(2)/Si substrate containing an octadecyltrichlorosilane (OTS) bilayer coating. The OTS bilayer coatings have possible use as anti-relaxation wall coatings for alkali atom vapor cells in miniaturized instruments such as chip-scale atomic clocks, and/or magnetometers. The measurement consists of the application of bipolar square wave pulses of +/- 10.0 V amplitude to the sample with varying frequencies in the range of 10(-2) to 10(2) Hz while recording X-ray photoemission data. For a conducting sample this type of measurement twins all the photoemission peaks at -10.0 and +10.0 eV positions at all frequencies with exactly 20.0 eV difference between them. However, for samples amenable to charging, the difference between the twinned peaks is less than 20.0 eV, and gradually decreases at correspondingly lower frequencies. For the sample under consideration here at 0.01 Hz, the twinned O1s and Si2p peaks, representing the SiO(2) substrate, are separated by 18.2 eV, displaying a 1.8 eV charging shift. These positions differ from those of the C1s (18.0 eV) representing the OTS bilayer and the Rb3d peaks (18.1 eV). These results reveal that the Rb is electrically (perhaps also chemically) isolated from the OTS bilayer, which may be correlated with the improved performance of the OTS bilayers as anti-relaxation coatings in these alkali atom magnetometer cells.en_US
dc.identifier.doi10.1016/j.apsusc.2009.10.029en_US
dc.identifier.eissn1873-5584
dc.identifier.issn0169-4332
dc.identifier.urihttp://hdl.handle.net/11693/11762
dc.language.isoEnglishen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.apsusc.2009.10.029en_US
dc.source.titleApplied Surface Scienceen_US
dc.subjectXPSen_US
dc.subjectChargingen_US
dc.subjectImpedanceen_US
dc.subjectBilayer OTSen_US
dc.subjectRb-atomen_US
dc.titleImpedance-type measurements using XPSen_US
dc.typeArticleen_US

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