Computer-controlled characterization of high-voltage, high-frequency SiC devices?

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dc.citation.epage305en_US
dc.citation.spage300en_US
dc.contributor.authorOrtiz-Rodriguez, J. M.en_US
dc.contributor.authorHefner, A. R.en_US
dc.contributor.authorBerning, D.en_US
dc.contributor.authorHood, C.en_US
dc.contributor.authorÖlçüm, Selimen_US
dc.coverage.spatialTroy, NY, USAen_US
dc.date.accessioned2016-02-08T11:46:13Z
dc.date.available2016-02-08T11:46:13Z
dc.date.issued2006en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 16-19 July 2006en_US
dc.descriptionConference Name: 10th IEEE Workshop on Computers in Power Electronics, IEEE 2006en_US
dc.description.abstractA software-based high-voltage curve tracer application for SiC device characterization is presented. This flexible application interface is developed to define testing parameters needed to control the hardware of a custom-made 25 kV-capable SiC characterization test bed. Data acquisition is controlled for optimum resolution, and I-V characterization is computed by means of a user-defined time interval based on the shape of the applied power pulses. Both voltage and current waveforms are displayed for each data point captured to allow the user to observe transient effects. Additionally, the software allows archiving some or all of these transient waveforms. Acquired results are shown to demonstrate functionality and flexibility of the new system.en_US
dc.identifier.doi10.1109/COMPEL.2006.305630en_US
dc.identifier.issn1093-5142
dc.identifier.urihttp://hdl.handle.net/11693/27158
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/COMPEL.2006.305630en_US
dc.source.titleProceedings of the 10th IEEE Workshop on Computers in Power Electronics, IEEE 2006en_US
dc.subjectData acquisitionen_US
dc.subjectEquipment testingen_US
dc.subjectSilicon carbideen_US
dc.subjectComputer-controlleden_US
dc.subjectCurrent waveformsen_US
dc.subjectData pointsen_US
dc.subjectDevice characterizationen_US
dc.subjectHigh-frequency (HF)en_US
dc.subjectHigh-voltage (HV)en_US
dc.subjectI-V characterizationen_US
dc.subjectPower pulsesen_US
dc.subjectSiC devicesen_US
dc.subjectSoftware-baseden_US
dc.subjectTest bedsen_US
dc.subjectTime intervalsen_US
dc.subjectTransient effectsen_US
dc.subjectWaveformsen_US
dc.subjectPower electronicsen_US
dc.titleComputer-controlled characterization of high-voltage, high-frequency SiC devices?en_US
dc.typeConference Paperen_US

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