Electronic and optical properties of atomic layer-deposited ZnO and TiO2

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage4514en_US
dc.citation.issueNumber8en_US
dc.citation.spage4508en_US
dc.citation.volumeNumber47en_US
dc.contributor.authorAtes, H.en_US
dc.contributor.authorBolat, S.en_US
dc.contributor.authorOruc, F.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2019-02-21T16:10:53Z
dc.date.available2019-02-21T16:10:53Z
dc.date.issued2018en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractMetal oxides are attractive for thin film optoelectronic applications. Due to their wide energy bandgaps, ZnO and TiO2 are being investigated by many researchers. Here, we have studied the electrical and optical properties of ZnO and TiO2 as a function of deposition and post-annealing conditions. Atomic layer deposition (ALD) is a novel thin film deposition technique where the growth conditions can be controlled down to atomic precision. ALD-grown ZnO films are shown to exhibit tunable optical absorption properties in the visible and infrared region. Furthermore, the growth temperature and post-annealing conditions of ZnO and TiO2 affect the electrical properties which are investigated using ALD-grown metal oxide as the electron transport channel on thin film field-effect devices.en_US
dc.description.provenanceMade available in DSpace on 2019-02-21T16:10:53Z (GMT). No. of bitstreams: 1 Bilkent-research-paper.pdf: 222869 bytes, checksum: 842af2b9bd649e7f548593affdbafbb3 (MD5) Previous issue date: 2018en
dc.description.sponsorshipThis work was partially supported by The Scientific and Technological Research Council of Turkey (TUBITAK) under Grant 112M004. The authors would like to thank the Gazi University Project (07/ 2015-08 and 07/2016-11) for support.en_US
dc.identifier.doi10.1007/s11664-018-6373-8en_US
dc.identifier.eissn1543-186Xen_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://hdl.handle.net/11693/50524
dc.language.isoEnglishen_US
dc.publisherSpringer New York LLCen_US
dc.relation.isversionofhttps://doi.org/10.1007/s11664-018-6373-8en_US
dc.relation.project07/ 2015-08, 07/2016-11 - 112M004en_US
dc.source.titleJournal of Electronic Materialsen_US
dc.subjectZinc oxideen_US
dc.subjectTitanium oxideen_US
dc.subjectAtomic layer depositionen_US
dc.subjectThin film transistoren_US
dc.subjectSemiconductoren_US
dc.titleElectronic and optical properties of atomic layer-deposited ZnO and TiO2en_US
dc.typeArticleen_US

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