ZnO based charge trapping memory with embedded nanoparticles

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ZnO based charge trapping memory with embedded nanoparticles.pdf (840.29 KB)

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2012

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Abstract

A thin film ZnO charge trapping memory cell with embedded nanoparticles is demonstrated by Physics Based TCAD simulation. The results show 3V increase in the Vt shift due to the nanoparticles for the same operating voltage. In addition a 6V reduction in the programming voltage is obtained due the nanoparticles. In addition, the effect of the trapping layer and tunnel oxide scaling on the 10 year retention time is studied. © 2012 IEEE.

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2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)

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IEEE

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Keywords

Charge Trapping, Memory, Nano, Nanoparticles, ZnO, Charge trapping memories, Embedded nanoparticles, Nano, Operating voltage, Physics-based, Programming voltage, Retention time, TCAD simulation, Trapping layers, Tunnel oxides, ZnO, Charge trapping, Data storage equipment, Nanotechnology, Zinc oxide, Nanoparticles

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http://hdl.handle.net/11693/28137

Published Version (Please cite this version)

http://dx.doi.org/10.1109/NANO.2012.6322033

Collections

Scholarly Publications - Electrical and Electronics Engineering

Language

English

Type

Conference Paper