Eighty nine-watt cascaded multistage power amplifier using gallium nitride-on-silicon high electron mobility transistor for L-band radar applications

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buir.contributor.authorZafar, Salahuddin
buir.contributor.authorAkoğlu, Büşra Çankaya
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidZafar, Salahuddin|0000-0002-5212-9602
buir.contributor.orcidAkoğlu, Büşra Çankaya|0000-0001-5680-1649
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage841en_US
dc.citation.issueNumber8en_US
dc.citation.spage830en_US
dc.citation.volumeNumber15en_US
dc.contributor.authorHayat, K.
dc.contributor.authorZafar, Salahuddin
dc.contributor.authorMehmood, T.
dc.contributor.authorAkoğlu, Büşra Çankaya
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2022-02-18T11:09:34Z
dc.date.available2022-02-18T11:09:34Z
dc.date.issued2021-11
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThis work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class-AB for L-band radar applications. The purpose of this endeavour is to develop an MPA using GaN HEMT devices to achieve optimised parameters such as high gain, high power, better efficiency, and linearity in a compact size. In an MPA design with multiple stages, oscillations are common owing to unwanted high gain at the lower frequency range. To overcome this issue, we introduced interstage harmonic termination networks as a novel approach to suppress high gain at low frequencies, which are prone to oscillations. The proposed cascaded MPA provides the maximum radio-frequency output power of 89 W and a power gain of 52 dB with an associated power-added efficiency of 51%. Second and third harmonic levels are −32.5 and −37 dBc, respectively. Two-tone measurements are performed with a frequency separation of 10 MHz, and an intermodulation level of less than −33 dBc is achieved.en_US
dc.description.provenanceSubmitted by Samet Emre (samet.emre@bilkent.edu.tr) on 2022-02-18T11:09:34Z No. of bitstreams: 1 Eighty_nine-watt_cascaded_multistage_power_amplifier_using_gallium_nitride-on-silicon_high_electron_mobility_transistor_for_L-band_radar_applications.pdf: 2177097 bytes, checksum: a381d93aaebb353035405bec207eed52 (MD5)en
dc.description.provenanceMade available in DSpace on 2022-02-18T11:09:34Z (GMT). No. of bitstreams: 1 Eighty_nine-watt_cascaded_multistage_power_amplifier_using_gallium_nitride-on-silicon_high_electron_mobility_transistor_for_L-band_radar_applications.pdf: 2177097 bytes, checksum: a381d93aaebb353035405bec207eed52 (MD5) Previous issue date: 2021-11en
dc.identifier.doi10.1049/cds2.12075en_US
dc.identifier.eissn1751-8598
dc.identifier.issn1751-858X
dc.identifier.urihttp://hdl.handle.net/11693/77505
dc.language.isoEnglishen_US
dc.publisherThe Institution of Engineering and Technologyen_US
dc.relation.isversionofhttps://doi.org/10.1049/cds2.12075en_US
dc.source.titleIET Circuits, Devices & Systemsen_US
dc.titleEighty nine-watt cascaded multistage power amplifier using gallium nitride-on-silicon high electron mobility transistor for L-band radar applicationsen_US
dc.typeArticleen_US

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