Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride
buir.contributor.author | Aydınlı, Atilla | |
dc.citation.epage | 259 | en_US |
dc.citation.spage | 252 | en_US |
dc.citation.volumeNumber | 3283 | en_US |
dc.contributor.author | Serpengüzel, Ali | en_US |
dc.contributor.author | Aydınlı, Atilla | en_US |
dc.contributor.author | Bek, Alpan | en_US |
dc.coverage.spatial | San Jose, California, United States | en_US |
dc.date.accessioned | 2016-02-08T11:59:05Z | en_US |
dc.date.available | 2016-02-08T11:59:05Z | en_US |
dc.date.issued | 1998 | en_US |
dc.department | Department of Physics | en_US |
dc.description | Date of Conference: 24-30 January 1998 | en_US |
dc.description | Conference Name: SPIE Optoelectronics and High-Power Lasers and Applications, 1998 | en_US |
dc.description.abstract | Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride - air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T11:59:05Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1998 | en |
dc.identifier.doi | 10.1117/12.316689 | en_US |
dc.identifier.issn | 0277-786X | en_US |
dc.identifier.uri | http://hdl.handle.net/11693/27665 | en_US |
dc.language.iso | English | en_US |
dc.publisher | SPIE | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1117/12.316689 | en_US |
dc.source.title | Proceedings of SPIE Vol. 3283, Physics and Simulation of Optoelectronic Devices VI | en_US |
dc.subject | Amorphous silicon | en_US |
dc.subject | Fabry-Perot | en_US |
dc.subject | Microcavity | en_US |
dc.subject | Optoelectronics | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Plasma enhanced chemical vapor deposition | en_US |
dc.subject | Resonators | en_US |
dc.subject | Spontaneous emission | en_US |
dc.subject | Thin films | en_US |
dc.title | Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride | en_US |
dc.type | Conference Paper | en_US |
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