Tunable visible response of ZnO thin-film phototransistors with atomic layer deposition technique

Date
2012
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Source Title
IEEE Photonics Conference 2012
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Publisher
IEEE
Volume
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Pages
384 - 385
Language
English
Type
Conference Paper
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Abstract

We fabricated TFPT with 14-nm-thick n-ZnO channel at 80°C by ALD technique. The drain to source photocurrent due to UV photons can be tuned by changing gate voltage. We also observed that the absorption of sub-bandgap photons could be prevented by operating at positive gate bias. This property could be used for light modulators for visible regime. Moreover, this could be applied to the smart glass technology for electrical voltage controlled transparency. Furthermore, solar-blind UV detectors could also be designed with this technology. © 2012 IEEE.

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Keywords
Atomic layer, Gate voltages, Positive gate bias, Smart glass, Solar-blind, UV photons, Voltage-controlled, ZnO, Light modulators, Photonics, Photons, Zinc oxide, Atomic layer deposition
Citation
Published Version (Please cite this version)