Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors

Simple item page
buir.contributor.authorAydınlı, Atilla
dc.citation.epage074509-4en_US
dc.citation.issueNumber7en_US
dc.citation.spage074509-1en_US
dc.citation.volumeNumber111en_US
dc.contributor.authorSalihoğlu, Ömeren_US
dc.contributor.authorMuti, Abdullahen_US
dc.contributor.authorKutluer, Kutluen_US
dc.contributor.authorTansel, T.en_US
dc.contributor.authorTuran, R.en_US
dc.contributor.authorKocabaş, Coşkunen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2016-02-08T12:14:42Z
dc.date.available2016-02-08T12:14:42Z
dc.date.issued2012en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractTaking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single pixel photodetectors in a self cleaning process (λ cut-off ∼ 5.1 m). Al 2O 3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes, the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 × 10 13 Jones, respectively at 4μm and 77 K. Quantum efficiency (QE) was determined as 41 for these detectors. This conformal passivation technique is promising for focal plane array (FPA) applications. © 2012 American Institute of Physics.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:14:42Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2012en
dc.identifier.doi10.1063/1.3702567en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/28226
dc.language.isoEnglishen_US
dc.publisherAIPen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3702567en_US
dc.source.titleJournal of Applied Physicsen_US
dc.subjectAluminum oxidesen_US
dc.subjectAtomic layer depositeden_US
dc.subjectDetectivityen_US
dc.subjectInAs/GaSb superlatticesen_US
dc.subjectMid wave infrared (MWIR)en_US
dc.subjectOptical performanceen_US
dc.subjectResponsivityen_US
dc.subjectSelf-cleaning processen_US
dc.subjectSingle pixelen_US
dc.subjectType IIen_US
dc.subjectZero biasen_US
dc.subjectAluminumen_US
dc.subjectAtomic layer depositionen_US
dc.subjectIndium antimonidesen_US
dc.subjectInfrared radiationen_US
dc.subjectPhotodetectorsen_US
dc.subjectSuperlatticesen_US
dc.subjectPassivationen_US
dc.titleAtomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectorsen_US
dc.typeArticleen_US

Files

Collections

Scholarly Publications - Physics