Temperature dependence of the Raman-active phonon frequencies in indium sulfide

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Abstract

The temperature dependence of the Raman-active mode frequencies in indium sulfide was measured in the range from 10 to 300 K. The analysis of the temperature dependence of the A g intralayer optical modes show that Raman frequency shift results from the change of harmonic frequency with volume expansion and anharmonic coupling to phonons of other branches. The pure-temperature contribution (phonon-phonon coupling) is due to three- and four-phonon processes.

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Solid State Communications

Publisher

Pergamon Press

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Published Version (Please cite this version)

Language

English