Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage3274en_US
dc.citation.issueNumber17en_US
dc.citation.spage3272en_US
dc.citation.volumeNumber81en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorAytur, O.en_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorTut, T.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:32:12Z
dc.date.available2016-02-08T10:32:12Z
dc.date.issued2002en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n-/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of ∼274nm was achieved with AlxGa1-xN (x=0.38) absorption layer. The solar-blind detectors exhibited <1.8nA/cm2 dark current density in the 0-25 V reverse bias regime, and a maximum quantum efficiency of 42% around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10-29A2/Hz at 10 kHz. © 2002 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.1516856en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/24635
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1516856en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectAbsorption layeren_US
dc.subjectAlGaN/GaN heterostructuresen_US
dc.subjectCutoff wavelengthsen_US
dc.subjectDetectivityen_US
dc.subjectDetector noiseen_US
dc.subjectFabrication processen_US
dc.subjectLow noiseen_US
dc.subjectNoise poweren_US
dc.subjectReverse biasen_US
dc.subjectSchottky photodiodesen_US
dc.subjectSolar-blinden_US
dc.subjectSolar-blind detectorsen_US
dc.subjectGalliumen_US
dc.subjectGallium nitrideen_US
dc.subjectPhotodiodesen_US
dc.subjectFabricationen_US
dc.titleSolar-blind AlGaN-based Schottky photodiodes with low noise and high detectivityen_US
dc.typeArticleen_US

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