Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage1518en_US
dc.citation.issueNumber8en_US
dc.citation.spage1513en_US
dc.citation.volumeNumber406en_US
dc.contributor.authorKelekci, O.en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:53:48Z
dc.date.available2016-02-08T09:53:48Z
dc.date.issued2011-02-01en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe effects of the In-mole fraction (x) of an InxGa 1-xN back barrier layer and the thicknesses of different layers in pseudomorphic AlyGa1-yN/AlN/GaN/InxGa 1-xN/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear SchrdingerPoisson equations. Strain relaxation limits were also calculated for the investigated AlyGa1-yN barrier layer and InxGa1-xN back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:53:48Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2011en
dc.identifier.doi10.1016/j.physb.2011.01.059en_US
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/11693/21975
dc.language.isoEnglishen_US
dc.publisherELSEVIERen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.physb.2011.01.059en_US
dc.source.titlePhysica B: Condensed Matteren_US
dc.subject2DEGen_US
dc.subjectAlGaN/AlN/GaNen_US
dc.subjectBack barrieren_US
dc.subjectHEMTen_US
dc.subjectInGaNen_US
dc.subjectPoissonen_US
dc.subjectSchrdingeren_US
dc.subjectHigh electron mobility transistorsen_US
dc.titleNumerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriersen_US
dc.typeArticleen_US

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