Analyzing the InGaN LED structures for white LED applications

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage536en_US
dc.citation.issueNumber3en_US
dc.citation.spage530en_US
dc.citation.volumeNumber20en_US
dc.contributor.authorDurukan, İ. K.
dc.contributor.authorÖztürk, M. K.
dc.contributor.authorÖzçelik, S.
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2020-11-03T08:11:25Z
dc.date.available2020-11-03T08:11:25Z
dc.date.issued2017
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn this paper, blue-light InGaN/GaN light-emitting diodes were deposited on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) to investigate the properties of blue LEDs with various well thickness having different indium composition. Structural properties of LEDs was studied by high-resolution X-ray diffraction (HRXRD), Photoluminescence (PL) and ultraviole (UV). Our aim is to increase the quality of the LED structure by taking advantage of the mosaic structure calculations. The use of LED in commercial areas has increased. But, there are great difficulties in preventing defects. Lateral and vertical crystal size, dislocations, tilt and twist properties are investigated with HR-XRD device by Vegard and William hall semi-experimental methods. While dislocation value of the first sample is lower than first sample with less indium content ration, stress value of first sample is higher than second sample. In addition, The twist angle of first sample is lower. This shows that while the structure is crystallized, the tension is much greater, which is an interesting result. This is due to the mismatch when the diode is cooled to lower temperatures than the growth temperature.en_US
dc.identifier.eissn2147-9429
dc.identifier.issn1302-0900
dc.identifier.urihttp://hdl.handle.net/11693/54373
dc.language.isoEnglishen_US
dc.publisherGazi Üniversitesien_US
dc.source.titlePoliteknik Dergisi - Journal of Polytechnicen_US
dc.titleAnalyzing the InGaN LED structures for white LED applicationsen_US
dc.title.alternativeBeyaz Led uygulamaları için InGaN LED yapıların analizien_US
dc.typeArticleen_US

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Department of Physics
Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)