Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength

Date
2006-03-21
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
1077-3118
Publisher
AIP Publishing LLC
Volume
88
Issue
12
Pages
123503-1 - 123503-2
Language
English
Type
Article
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Abstract

Deep ultraviolet Al0.75Ga0.25N metal-semiconductor-metal photodetectors with high Al concentration have been demonstrated. A metal-organic chemical vapor deposition grown high quality Al0.75Ga0.25N layer was used as a template. Spectral responsivity, current-voltage, optical transmission, and noise measurements were carried out. The photodetectors exhibited a 229 nm cutoff wavelength and a peak responsivity of 0.53 A/W at 222 nm. Some 100x100 mu m(2) devices have shown a dark current density of 5.79x10(-10) A/cm(2) under 50 V bias. An ultraviolet-visible rejection ratio of seven orders of magnitude was obtained from the fabricated devices.

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Keywords
Algan, Photodetectors, Alxga1-xn
Citation
Published Version (Please cite this version)