Plasma enhanced chemical vapor deposition of low-loss as-grown germanosilicate layers for optical waveguides

Simple item page
buir.contributor.authorAydınlı, Atilla
dc.citation.epage517en_US
dc.citation.spage511en_US
dc.citation.volumeNumber5451en_US
dc.contributor.authorAy, Feridunen_US
dc.contributor.authorAgan, S.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.coverage.spatialStrasbourg, Franceen_US
dc.date.accessioned2016-02-08T11:52:46Zen_US
dc.date.available2016-02-08T11:52:46Zen_US
dc.date.issued2004en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionDate of Conference: 26-30 April 2004en_US
dc.descriptionConference Name: SPIE Photonics Europe, 2004en_US
dc.description.abstractWe report on systematic growth and characterization of low-loss germanosilicate layers for use in optical waveguides. Plasma enhanced chemical vapor deposition (PECVD) technique was used to grow the films using silane, germane and nitrous oxide as precursor gases. Chemical composition was monitored by Fourier transform infrared (FTIR) spectroscopy. N-H bond concentration of the films decreased from 0.43 ×1022 cm -3 down to below 0.06x 1022 cm-3, by a factor of seven as the GeH4 flow rate increased from 0 to 70 seem. A simultaneous decrease of O-H related bonds was also observed by a factor of 10 in the same germane flow range. The measured TE loss rates at λ=632.8 nm were found to increase from are 0.20 ± 0.02 to 6.46 ± 0.04 dB/cm as the germane flow rate increased from 5 to 50 seem, respectively. In contrast, the propagation loss values for TE polarization at λ-1550 nm were found to decrease from 0.32 ± 0.03 down to 0.14 ± 0.06 dB/cm for the same samples leading to the lowest values reported so far in the literature, eliminating the need for high temperature annealing as is usually done for these materials to be used in waveguide devices.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:52:46Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2004en
dc.identifier.doi10.1117/12.546080en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11693/27414en_US
dc.language.isoEnglishen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.546080en_US
dc.source.titleProceedings of SPIE Vol. 5451, Integrated Optics and Photonic Integrated Circuitsen_US
dc.subjectFTIRen_US
dc.subjectGermanosilicateen_US
dc.subjectOptical lossen_US
dc.subjectOptical waveguidesen_US
dc.subjectPECVDen_US
dc.subjectPrism couplingen_US
dc.subjectGermanium compoundsen_US
dc.subjectLight polarizationen_US
dc.titlePlasma enhanced chemical vapor deposition of low-loss as-grown germanosilicate layers for optical waveguidesen_US
dc.typeConference Paperen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Plasma enhanced chemical vapor deposition of low loss as-grown germanosilicate layers for optical waveguides.pdf
Size:
241.23 KB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download

Collections

Scholarly Publications - Physics