Design of multi-octave band GaN-HEMT power amplifier
Date
2012
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC)
Print ISSN
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.
Course
Other identifiers
Book Title
Keywords
GaN HEMT , Coplanar wave-guide (CPW) , Gain equalization , GaN HEMTs , Hemt technologies , Matching networks , Monolithic microwave integrated circuits (MMIC) , Multi-octave bandwidths , Small signal gain , Amplifiers (electronic) , Broadband amplifiers , Coplanar waveguides , Electron devices , Electronic equipment testing , Frequency bands , Gallium nitride , Power amplifiers , Monolithic microwave integrated circuits