Design of multi-octave band GaN-HEMT power amplifier

Date
2012
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2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC)
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IEEE
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English
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Conference Paper
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Abstract

This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.

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GaN HEMT, Coplanar wave-guide (CPW), Gain equalization, GaN HEMTs, Hemt technologies, Matching networks, Monolithic microwave integrated circuits (MMIC), Multi-octave bandwidths, Small signal gain, Amplifiers (electronic), Broadband amplifiers, Coplanar waveguides, Electron devices, Electronic equipment testing, Frequency bands, Gallium nitride, Power amplifiers, Monolithic microwave integrated circuits
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Published Version (Please cite this version)