Optically implemented broadband blueshift switch in the terahertz regime

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage037403-4en_US
dc.citation.issueNumber3en_US
dc.citation.spage037403-1en_US
dc.citation.volumeNumber106en_US
dc.contributor.authorShen, N. H.en_US
dc.contributor.authorMassaouti, M.en_US
dc.contributor.authorGokkavas, M.en_US
dc.contributor.authorManceau J. M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorKafesaki, M.en_US
dc.contributor.authorKoschny, T.en_US
dc.contributor.authorTzortzakis, S.en_US
dc.contributor.authorSoukoulis, C. M.en_US
dc.date.accessioned2016-02-08T09:54:48Z
dc.date.available2016-02-08T09:54:48Z
dc.date.issued2011-01-18en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime.en_US
dc.identifier.doi10.1103/PhysRevLett.106.037403en_US
dc.identifier.issn0031-9007
dc.identifier.urihttp://hdl.handle.net/11693/22049
dc.language.isoEnglishen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.106.037403en_US
dc.source.titlePhysical Review Lettersen_US
dc.subjectBlue shiften_US
dc.subjectCritical regionen_US
dc.subjectExperimental approachesen_US
dc.subjectFabricated deviceen_US
dc.subjectOptical controlen_US
dc.subjectOther applicationsen_US
dc.subjectPhotoconductive semiconductorsen_US
dc.subjectRed shiften_US
dc.subjectResonance stateen_US
dc.subjectSemiconductor technologyen_US
dc.subjectSwitchableen_US
dc.subjectTerahertzen_US
dc.subjectTunabilitiesen_US
dc.subjectTunable deviceen_US
dc.subjectTunable metamaterialsen_US
dc.subjectTuning rangesen_US
dc.subjectElectronic equipmenten_US
dc.subjectMetamaterialsen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.subjectSemiconductor device manufactureen_US
dc.subjectSemiconducting siliconen_US
dc.titleOptically implemented broadband blueshift switch in the terahertz regimeen_US
dc.typeArticleen_US

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