Optically implemented broadband blueshift switch in the terahertz regime
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 037403-4 | en_US |
dc.citation.issueNumber | 3 | en_US |
dc.citation.spage | 037403-1 | en_US |
dc.citation.volumeNumber | 106 | en_US |
dc.contributor.author | Shen, N. H. | en_US |
dc.contributor.author | Massaouti, M. | en_US |
dc.contributor.author | Gokkavas, M. | en_US |
dc.contributor.author | Manceau J. M. | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.contributor.author | Kafesaki, M. | en_US |
dc.contributor.author | Koschny, T. | en_US |
dc.contributor.author | Tzortzakis, S. | en_US |
dc.contributor.author | Soukoulis, C. M. | en_US |
dc.date.accessioned | 2016-02-08T09:54:48Z | |
dc.date.available | 2016-02-08T09:54:48Z | |
dc.date.issued | 2011-01-18 | en_US |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime. | en_US |
dc.identifier.doi | 10.1103/PhysRevLett.106.037403 | en_US |
dc.identifier.issn | 0031-9007 | |
dc.identifier.uri | http://hdl.handle.net/11693/22049 | |
dc.language.iso | English | en_US |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevLett.106.037403 | en_US |
dc.source.title | Physical Review Letters | en_US |
dc.subject | Blue shift | en_US |
dc.subject | Critical region | en_US |
dc.subject | Experimental approaches | en_US |
dc.subject | Fabricated device | en_US |
dc.subject | Optical control | en_US |
dc.subject | Other applications | en_US |
dc.subject | Photoconductive semiconductors | en_US |
dc.subject | Red shift | en_US |
dc.subject | Resonance state | en_US |
dc.subject | Semiconductor technology | en_US |
dc.subject | Switchable | en_US |
dc.subject | Terahertz | en_US |
dc.subject | Tunabilities | en_US |
dc.subject | Tunable device | en_US |
dc.subject | Tunable metamaterials | en_US |
dc.subject | Tuning ranges | en_US |
dc.subject | Electronic equipment | en_US |
dc.subject | Metamaterials | en_US |
dc.subject | Semiconducting silicon compounds | en_US |
dc.subject | Semiconductor device manufacture | en_US |
dc.subject | Semiconducting silicon | en_US |
dc.title | Optically implemented broadband blueshift switch in the terahertz regime | en_US |
dc.type | Article | en_US |
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