Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage061209-10en_US
dc.citation.issueNumber6en_US
dc.citation.spage061209-1en_US
dc.citation.volumeNumber36en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorAltındal, Ş.en_US
dc.contributor.authorUral, S.en_US
dc.contributor.authorKayal, Ö. A.en_US
dc.contributor.authorÖztürk, M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2019-02-21T16:06:23Z
dc.date.available2019-02-21T16:06:23Z
dc.date.issued2018en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe current-conduction mechanisms of the as-deposited and annealed at 450 °C (Ni/Pt) Schottky contacts on AlInGaN quaternary alloy have been investigated in the temperature range of 80-320 K. The zero-bias barrier height (BH) (ΦB 0) and ideality factor (n) of them were evaluated using thermionic emission (TE) theory. The ΦB 0 and n values calculated from the I-V characteristics show a strong temperature dependence. Such behavior of ΦB 0 and n is attributed to Schottky barrier inhomogeneities. Therefore, both the ΦB 0 vs n and ΦB 0 vs q/2kT plots were drawn to obtain evidence on the Gaussian distribution (GD) of the barrier height at the metal/semiconductor interface. These plots show two different linear parts at low and intermediate temperatures for as-deposited and annealed Schottky contacts. Thus, the mean value of ΦB 0 and standard deviation (σ0) was calculated from the linear parts of the ΦB 0 vs q/kT plots for both samples. The values of the effective Richardson constant (A) and mean BH were obtained from the modified Richardson plots which included the effect of barrier inhomogeneity. These values of Richardson constant and barrier height for as-deposited contacts were found to be 19.9 A cm-2 K-2 and 0.59 eV, respectively, at low temperature, but 43.3 A cm-2 K-2 and 1.32 eV, respectively, at intermediate temperatures. These values of Richardson constant and barrier height for annealed contacts were found to be 19.6 A cm-2 K-2 and 0.37 eV, respectively, at low temperature, but 42.9 A cm-2 K-2 and 1.54 eV, respectively, at intermediate temperatures. It is clear that the value of the Richardson constant obtained for as-deposited and annealed samples by using double-GD for intermediate temperatures is close to the theoretical value of AlInGaN (=44.7 A cm-2 K-2). Therefore, I-V-T characteristics for the as-deposited and annealed Schottky contacts in the temperature range of 80-320 K can be successfully explained based on TE theory with double-GD of the BHs.
dc.description.sponsorshipThis work is supported by the TUBITAK under Project No. 116F041. One of the authors (E.O.) also acknowledges partial support from the Turkish Academy of Sciences.
dc.identifier.doi10.1116/1.5045259
dc.identifier.issn2166-2746
dc.identifier.urihttp://hdl.handle.net/11693/50308
dc.language.isoEnglish
dc.publisherAVS Science and Technology Society
dc.relation.isversionofhttps://doi.org/10.1116/1.5045259
dc.relation.projectTürkiye Bilimler Akademisi, TÜBA - 116F041
dc.source.titleJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronicsen_US
dc.titleGaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloyen_US
dc.typeArticleen_US

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