Low - temperature self - limiting growth of III - nitride thin films by plasma - enhanced atomic layer deposition

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buir.contributor.authorBıyıklı, Necmi
dc.citation.epage1014en_US
dc.citation.issueNumber10en_US
dc.citation.spage1008en_US
dc.citation.volumeNumber4en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorOzgit, C.en_US
dc.contributor.authorDonmez, I.en_US
dc.date.accessioned2016-02-08T09:44:41Z
dc.date.available2016-02-08T09:44:41Z
dc.date.issued2012en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe report on the low-temperature self-limiting growth and characterization of III-Nitride thin films. AlN and GaN films were deposited by plasma-enhanced atomic layer deposition (PEALD) on various substrates using trimethylaluminum (TMA), trimethylgallium (TMG) and triethylgallium (TEG) as group-III, and ammonia (NH3) as nitrogen precursor materials. Self-limiting growth behavior, which is the major characteristic of an ALD process, was achieved for both nitride films at temperatures below 200 °C. AlN deposition rate saturated around 0.86 Å/cycle for TMA and NH3 doses starting from 0.05 and 40 s, respectively, whereas GaN growth rate saturated at a lower value of 0.56 Å/cycle and 0.48 Å/cycle for TMG and TEG doses 0.015 s and 1 s, respectively. The saturation dose for NH3 was measured as 90 s and 120 s, for TMG and TEG experiments, respectively. Within the self-limiting growth temperature range (ALD window), film thicknesses increased linearly with the number of deposition cycles. At higher temperatures (≥225 °C and ≥350 °C for AlN and GaN respectively), deposition rate became temperature-dependent, with increasing growth rates. Chemical composition and bonding states of the films deposited within the self-limiting growth regime were investigated by X-ray photoelectron spectroscopy (XPS). GaN films exhibited high oxygen concentrations regardless of the precursors choice, either TMG or TEG, whereas low-oxygen incorporation in AlN films was confirmed by high resolution Al 2p and N 1s spectra of AlN films. AlN films were polycrystalline with a hexagonal wurtzite structure regardless of the substrate selection as determined by grazing incidence X-ray diffraction (GIXRD). GaN films showed amorphous-like XRD signature, confirming the highly defective layers. High-resolution transmission electron microscopy (HR-TEM) images of the AlN thin films revealed a microstructure consisting of several-nanometer sized crystallites, whereas GaN films exhibited sub-nm small crystallites dispersed in an amorphous matrix.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:44:41Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2012en
dc.identifier.doi10.1166/nnl.2012.1440en_US
dc.identifier.eissn19414919
dc.identifier.issn1941 - 4900
dc.identifier.urihttp://hdl.handle.net/11693/21318
dc.language.isoEnglishen_US
dc.publisherAmerican Scientific Publishersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1166/nnl.2012.1440en_US
dc.source.titleNanoscience and Nanotechnology Lettersen_US
dc.subjectAlNen_US
dc.subjectAtomic layer depositionen_US
dc.subjectGaNen_US
dc.subjectIII-nitrideen_US
dc.subjectLow-temperatureen_US
dc.subjectSelf-limiting growthen_US
dc.subjectStructural characterizationen_US
dc.subjectThin filmen_US
dc.titleLow - temperature self - limiting growth of III - nitride thin films by plasma - enhanced atomic layer depositionen_US
dc.typeArticleen_US

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