Silicon oxynitride layers for applications in optical waveguides

buir.supervisorAydınlı, Atilla
dc.contributor.authorAy, Feridun
dc.date.accessioned2016-01-08T20:17:35Z
dc.date.available2016-01-08T20:17:35Z
dc.date.copyright2000-09
dc.date.issued2000-09
dc.departmentDepartment of Physicsen_US
dc.descriptionThesis (Master's): Department of Physics and the Institute of Engineering and Science of Bilkent Univ., 2000.en_US
dc.description Cataloged from PDF version of article.en_US
dc.descriptionIncludes bibliographical references (leaves 103-108).en_US
dc.description.abstractSilicon oxynitride layers, aimed to serve as the core material for optical waveguides operating at l.55µm, v.-ere grown by a PECVD technique using SiH4, N20, and NH3 as precursor gases. The films were deposited at 350 °c, 13.56 MHz RF frequency, and 1 Torr pressure by varying the flow rates of N20 and l\"H3 gases. The resulting refractirn indices of the layers varied between 1.47 and 2.0. The compositional properties of the layers were analyzed by FTIR and ATR infrared spectroscopy techniques. A special attention was given to the N-H bond stretching absorption at 3300-3400 cm-1, since its first overtone is known to be the main cause of the optical absorption at l.55µm. An annealing study was performed in order to reduce or eliminate this bonding type. For the annealed samples the corresponding concentration was strongly reduced as verified by FTIR transmittance and ATR methods. A correlation between the N-H concentration and absorption loss was verified for silicon oxynitride slab waveguides. Moreover, a single mode waveguide with silicon oxynitride core layer was fabricated. lts absorption and insertion loss values were determined by butt-coupling method, resulting in low loss waveguides.
dc.description.degreeM.S.en_US
dc.description.statementofresponsibilityby Feridun Ayen_US
dc.format.extentxiii, 108 leaves, illustrations ; 30 cm.en_US
dc.identifier.urihttp://hdl.handle.net/11693/18241
dc.language.isoEnglishen_US
dc.publisherBilkent Universityen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectPECVD
dc.subjectSilicon oxynitride
dc.subjectWaveguide
dc.subjectOptical absorption
dc.subjectSingle mode
dc.subjectPrism coupling
dc.subjectAnnealing
dc.subjectFTIR
dc.subjectATR
dc.titleSilicon oxynitride layers for applications in optical waveguidesen_US
dc.title.alternativeOptik dalga kılavuzları uygulamaları için silisyum oksinitrat tabakalar
dc.typeThesisen_US
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