Graphene based high frequency electronics

Abstract

Recent advances in chemical vapor deposition of graphene on large area substrates stimulate a significant research effort in order to search for new applications of graphene in the field of unusual electronics such as macroelectronics. The primary aim of this work is to use single layer of graphene for applications of high frequency electronics. This thesis consists of both theoretical and experimental studies of graphene transistors for the use of radio frequency electronics. We have grown graphene layer using chemical vapor deposition technique on large area copper substrates. The grown graphene layers are then transferred onto dielectric substrates for the fabrication of graphene transistors. The theoretical part of the thesis is focused on the understanding the performance limits of the graphene transistor for high frequency operation. We investigate the intrinsic high frequency performance of graphene field effect transistors using a self consistent transport model. The self-consistent transport model is based on a nonuniversal diffusive transport that is governed by the charged impurity scattering. The output and transfer characteristics of graphene field effect transistors are characterized as a function of impurity concentration and dielectric constant of the gate insulator. These experimental and theoretical studies shape the basis of our research on the graphene based radio frequency electronics.