Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology

buir.contributor.authorToprak, Ahmet
buir.contributor.authorYılmaz, Doğan
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidToprak, Ahmet|0000-0003-4879-8296
buir.contributor.orcidYılmaz, Doğan|0000-0001-6102-4477
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage8en_US
dc.citation.issueNumber12en_US
dc.citation.spage1en_US
dc.citation.volumeNumber8en_US
dc.contributor.authorToprak, Ahmet
dc.contributor.authorYılmaz, Doğan
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2022-02-10T11:05:12Z
dc.date.available2022-02-10T11:05:12Z
dc.date.issued2021-12-10
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching (ICP RIE) system. A recipe using only BCI3-based plasma with a resulting selectivity 13.5 for p-GaN in respect to InAlN was demonstrated. Surface roughness measurements depending on the etching time was performed by atomic force microscope (AFM) measurement and showed that a smooth etched surface with the root-mean-square roughness of 0.45 nm for p-GaN and 0.37 nm for InAlN were achieved. Normally-off p-GaN/InAlN HEMT devices were fabricated and tested by using the BCI3-based plasma we developed.en_US
dc.identifier.doi10.1088/2053-1591/ac3e98en_US
dc.identifier.eissn2053-1591
dc.identifier.urihttp://hdl.handle.net/11693/77220
dc.language.isoEnglishen_US
dc.publisherInstitute of Physics Publishing Ltd.en_US
dc.relation.isversionofhttps://doi.org/10.1088/2053-1591/ac3e98en_US
dc.source.titleMaterials Research Expressen_US
dc.subjectP-GaNen_US
dc.subjectInAlNen_US
dc.subjectBCI3en_US
dc.subjectNormally-offen_US
dc.subjectHEMTen_US
dc.subjectInductively coupled plasma reactive ion etchingen_US
dc.subjectRoot-mean-square roughnessen_US
dc.titleSelectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technologyen_US
dc.typeArticleen_US
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