A Comparative Passivation Study for InAs / GaSb Pin Superlattice Photodetectors

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage666en_US
dc.citation.issueNumber8en_US
dc.citation.spage661en_US
dc.citation.volumeNumber49en_US
dc.contributor.authorSalihoglu, O.en_US
dc.contributor.authorMuti, A.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2015-07-28T11:58:15Z
dc.date.available2015-07-28T11:58:15Z
dc.date.issued2013-08en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractIn the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD). We compare the impact of these layers on detectors fabricated under same conditions. We use ALD deposited Al2O3, HfO2, TiO2, ZnO, plasma enhanced chemical vapor deposition deposited SiO2, Si3N4, and sulfur containing octadecanethiol self assembled monolayer passivation layers on InAs/GaSb p-i-n superlattice diodes with an average cutoff wavelength of 5.1 mu m. Passivated and unpassivated photodetectors compared for their electrical performances.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T11:58:15Z (GMT). No. of bitstreams: 1 10.1109-JQE.2013.2267553.pdf: 1289544 bytes, checksum: 760b5f76804471dfda522ea3973e1cf2 (MD5)en
dc.identifier.doi10.1109/JQE.2013.2267553en_US
dc.identifier.eissn1558-1713
dc.identifier.issn0018-9197
dc.identifier.urihttp://hdl.handle.net/11693/11654
dc.language.isoEnglishen_US
dc.publisherIEEE Institute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/JQE.2013.2267553en_US
dc.source.titleIEEE Journal of Quantum Electronicsen_US
dc.subjectInfrareden_US
dc.subjectPhotodetectoren_US
dc.subjectInas/gasben_US
dc.subjectPassivationen_US
dc.subjectAlden_US
dc.subjectOdten_US
dc.subjectThiolen_US
dc.titleA Comparative Passivation Study for InAs / GaSb Pin Superlattice Photodetectorsen_US
dc.typeArticleen_US

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