Trends in molecular design strategies for ambient stable n-channel organic field effect transistors
dc.citation.epage | 7430 | en_US |
dc.citation.issueNumber | 30 | en_US |
dc.citation.spage | 7404 | en_US |
dc.citation.volumeNumber | 5 | en_US |
dc.contributor.author | Dhar, J. | en_US |
dc.contributor.author | Salzner, U. | en_US |
dc.contributor.author | Patil, S. | en_US |
dc.date.accessioned | 2018-04-12T13:50:04Z | |
dc.date.available | 2018-04-12T13:50:04Z | |
dc.date.issued | 2017 | en_US |
dc.department | Department of Chemistry | en_US |
dc.description.abstract | In recent years, organic semiconducting materials have enabled technological innovation in the field of flexible electronics. Substantial optimization and development of new π-conjugated materials has resulted in the demonstration of several practical devices, particularly in displays and photoreceptors. However, applications of organic semiconductors in bipolar junction devices, e.g. rectifiers and inverters, are limited due to an imbalance in charge transport. The performance of p-channel organic semiconducting materials exceeds that of electron transport. In addition, electron transport in π-conjugated materials exhibits poorer atmospheric stability and dispersive transient photocurrents due to extrinsic carrier trapping. Thus development of air stable n-channel conjugated materials is required. New classes of materials with delocalized n-doped states are under development, aiming at improvement of the electron transport properties of organic semiconductors. In this review, we highlight the basic tenets related to the stability of n-channel organic semiconductors, primarily focusing on the thermodynamic stability of anions and summarizing the recent progress in the development of air stable electron transporting organic semiconductors. Molecular design strategies are analysed with theoretical investigations. | en_US |
dc.description.provenance | Made available in DSpace on 2018-04-12T13:50:04Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2017 | en |
dc.identifier.doi | 10.1039/c6tc05467f | en_US |
dc.identifier.issn | 2050-7534 | |
dc.identifier.uri | http://hdl.handle.net/11693/38176 | |
dc.language.iso | English | en_US |
dc.publisher | Royal Society of Chemistry | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1039/c6tc05467f | en_US |
dc.source.title | Journal of Materials Chemistry C | en_US |
dc.subject | Atmospheric movements | en_US |
dc.subject | Display devices | en_US |
dc.subject | Doping (additives) | en_US |
dc.subject | Electron transport properties | en_US |
dc.subject | Electrons | en_US |
dc.subject | Flexible electronics | en_US |
dc.subject | Organic field effect transistors | en_US |
dc.subject | Rectifying circuits | en_US |
dc.subject | Thermodynamic stability | en_US |
dc.subject | Atmospheric stability | en_US |
dc.subject | Electron transporting | en_US |
dc.subject | N-channel organic semiconductors | en_US |
dc.subject | Organic semiconducting materials | en_US |
dc.subject | Pi-conjugated materials | en_US |
dc.subject | Technological innovation | en_US |
dc.subject | Theoretical investigations | en_US |
dc.subject | Transient photocurrents | en_US |
dc.subject | Field effect transistors | en_US |
dc.title | Trends in molecular design strategies for ambient stable n-channel organic field effect transistors | en_US |
dc.type | Review | en_US |
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