High-speed visible-blind GaN-based indium-tin-oxide Schottky photodiodes

buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage2840en_US
dc.citation.issueNumber17en_US
dc.citation.spage2838en_US
dc.citation.volumeNumber79en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKartaloglu, T.en_US
dc.contributor.authorAytur, O.en_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:34:27Z
dc.date.available2016-02-08T10:34:27Z
dc.date.issued2001en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe have fabricated GaN-based high-speed ultraviolet Schottky photodiodes using indium-tin-oxide (ITO) Schottky contacts. Before device fabrication, the optical transparency of thin ITO films in the visible-blind spectrum was characterized via transmission and reflection measurements. The devices were fabricated on n - /n+ GaN epitaxial layers using a microwave compatible fabrication process. Our ITO Schottky photodiode samples exhibited a maximum quantum efficiency of 47% around 325 nm. Time-based pulse-response measurements were done at 359 nm. The fabricated devices exhibited a rise time of 13 ps and a pulse width of 60 ps. © 2001 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.1412592en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/24795
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1412592en_US
dc.source.titleApplied Physics Lettersen_US
dc.titleHigh-speed visible-blind GaN-based indium-tin-oxide Schottky photodiodesen_US
dc.typeArticleen_US
relation.isAuthorOfPublication8c1d6866-696d-46a3-a77d-5da690629296

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