Metal-insulator transitions in bilayer electron-hole systems in transition metal dichalcogenides

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buir.contributor.authorTanatar, Bilal
buir.contributor.orcidTanatar, Bilal|0000-0002-5246-0119
dc.citation.epage195432-6en_US
dc.citation.issueNumber195432en_US
dc.citation.spage195432-1en_US
dc.citation.volumeNumber104en_US
dc.contributor.authorChui, S. T.
dc.contributor.authorWang, N.
dc.contributor.authorTanatar, Bilal
dc.date.accessioned2022-02-14T11:10:20Z
dc.date.available2022-02-14T11:10:20Z
dc.date.issued2021-11-29
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe investigated metal-insulator transitions for double-layer two-dimensional electron-hole systems in transition metal dichalcogenides stacked on opposite sides of thin layers of boron nitride. The interparticle interaction is calculated by including the screening due to the polarization charges at different interfaces, including that at the encapsulation and at the substrate of experimental structures. We compute and compare the energies of the metallic electron-hole plasma and the proposed insulating exciton solid with fixed-node diffusion Monte Carlo simulation including the high valley degeneracy of the electron bands. We found that for some examples of current experimental structures, the transition electron/hole density is in an experimentally accessible range between 4.1×10 12cm−2 and 14.5×10 12cm−2 for spacer thicknesses between 2.5 and 7.5 nm. Our result raises the possibility of exploiting this effect for logic device applications.en_US
dc.description.provenanceSubmitted by Burcu Böke (tburcu@bilkent.edu.tr) on 2022-02-14T11:10:20Z No. of bitstreams: 1 Metal-insulator_transitions_in_bilayer_electron-hole_systems_in_transition_metal_dichalcogenides.pdf: 517566 bytes, checksum: a275c3e8471c46f75e64b328abd42295 (MD5)en
dc.description.provenanceMade available in DSpace on 2022-02-14T11:10:20Z (GMT). No. of bitstreams: 1 Metal-insulator_transitions_in_bilayer_electron-hole_systems_in_transition_metal_dichalcogenides.pdf: 517566 bytes, checksum: a275c3e8471c46f75e64b328abd42295 (MD5) Previous issue date: 2021-11-29en
dc.identifier.doi10.1103/PhysRevB.104.195432en_US
dc.identifier.eissn1550-235X
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/11693/77324
dc.language.isoEnglishen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttps://doi.org/10.1103/PhysRevB.104.195432en_US
dc.source.titlePhysical Review Ben_US
dc.subjectElectrical conductivityen_US
dc.subjectPhase transitionsen_US
dc.subjectQuantum phase transitionsen_US
dc.titleMetal-insulator transitions in bilayer electron-hole systems in transition metal dichalcogenidesen_US
dc.typeArticleen_US

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