Formation and functionalization of boron phosphide monolayers
| buir.advisor | Durgun, Engin | |
| dc.contributor.author | Hallıoğlu, Lütfiye | |
| dc.date.accessioned | 2016-05-02T08:27:27Z | |
| dc.date.available | 2016-05-02T08:27:27Z | |
| dc.date.copyright | 2015-09 | |
| dc.date.issued | 2015-09 | |
| dc.date.submitted | 27-10-2015 | |
| dc.department | Graduate Program in Materials Science and Nanotechnology | en_US |
| dc.description | Cataloged from PDF version of thesis. | en_US |
| dc.description | Includes bibliographical references (leaves 45-52). | en_US |
| dc.description | Thesis (Master's): Bilkent University, Materials Science and Nanotechnology Program, İhsan Doğramacı Bilkent University, 2015. | en_US |
| dc.description.abstract | Since the synthesis of graphene with its unique properties has increased the focus on novel two dimensional (2D) materials, successively new 2D materials from either layered or non-layered materials have been synthesized following the advances in thin film growth and characterization techniques. Hexagonal boron nitride (h-BN) is the runner-up material, which is structurally stable in hexagonal honeycomb form. h-BN is an insulator whereas, it is a good thermal conductor. However, the electronic and structural properties of these 2D materials are very susceptible to doping and adsorption, as such, these properties can be altered extensively. Therefore, we have examined the phosphorization of h-BN with varying concentrations, which leads to stable 2D boron phosphide at the ultimate limit. The lattice constant of the BN16 gap semiconductor with impurity characteristics of adsorbants. Also, we have shown that except for Al and Ga, these impurity adatoms carry small amount of magnetic moment in moderate temperatures. In addition, we have studied the substitution of monolayer BP with Group III-IVV atoms. Based on our calculations, we have found that C and N can substitute P atom under ambient conditions. Nonetheless, only N atom selectively substitute for P atom, whereas C atom substitutes both for B and P giving rise to possible chemical etching of monolayer BP in the presence of excess C atom. Substitution of C for B/P results in metallic state in monolayer BP, while substitution of N for P leaves monolayer BP direct gap semiconductor. It is also found that none of these substitutions makes substrate magnetic. Using state-of-the-art computational tools based on the Density Functional Theory( DFT), we have calculated the structural and electronic properties of phosphorization of monolayer h-BN and doped monolayer h-BP. | en_US |
| dc.description.degree | M.S. | en_US |
| dc.description.provenance | Submitted by Betül Özen (ozen@bilkent.edu.tr) on 2016-05-02T08:27:27Z No. of bitstreams: 1 10091520.pdf: 5892217 bytes, checksum: d50bdad9e00a5455c3a03dfc5907cd1d (MD5) | en |
| dc.description.provenance | Made available in DSpace on 2016-05-02T08:27:27Z (GMT). No. of bitstreams: 1 10091520.pdf: 5892217 bytes, checksum: d50bdad9e00a5455c3a03dfc5907cd1d (MD5) Previous issue date: 2015-09 | en |
| dc.description.statementofresponsibility | by Lütfiye Hallıoğlu. | en_US |
| dc.embargo.release | 2017-09-15 | |
| dc.format.extent | xiv, 52 leaves : illustrations, charts. | en_US |
| dc.identifier.itemid | B151694 | |
| dc.identifier.uri | http://hdl.handle.net/11693/29025 | |
| dc.language.iso | English | en_US |
| dc.publisher | Bilkent University | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.subject | 2D materials | en_US |
| dc.subject | First principles calculations | en_US |
| dc.subject | Ab-initio | en_US |
| dc.subject | Monolayer boron nitride | en_US |
| dc.subject | Monolayer boron phosphide | en_US |
| dc.subject | Phosphorization | en_US |
| dc.subject | Doping | en_US |
| dc.subject | Density functional theory(DFT) | en_US |
| dc.title | Formation and functionalization of boron phosphide monolayers | en_US |
| dc.title.alternative | Tek atomik katmanlı boron fosfor yapılarının oluşturulması ve işlevselletirilmesi | en_US |
| dc.type | Thesis | en_US |