Strain and dipole effects in covalent-polar semiconductor superlattices

buir.contributor.authorÇıracı, Salim
buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÇıracı, Salim|0000-0001-8023-9860
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage5555en_US
dc.citation.issueNumber11en_US
dc.citation.spage5550en_US
dc.citation.volumeNumber44en_US
dc.contributor.authorBatra, I. P.en_US
dc.contributor.authorÇıracı, Salimen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:56:16Z
dc.date.available2016-02-08T10:56:16Z
dc.date.issued1991en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe energetics and electronic structure of lattice-matched (Ge)4/(GaAs)2 and strained, pseudomorphic (Si)4/(GaAs)2 (001) semiconductor superlattices have been studied with use of a self-consistent-field pseudopotential method. The interfaces are assumed to be uniform, but the interlayer distances of the pseudomorphic lattice are optimized to achieve a minimum-total-energy configuration. The calculated enthalpy of formation is in the 100-meV/atom range for these two superlattices, which is almost an order of magnitude larger than the strain component in (Si)4/(GaAs)2. The superlattice dipole induces a metal-insulator transition by periodically tilting the potential. The electrostatic energy derived from this dipole field is the main cause of the instability relative to disproportionation. © 1991 The American Physical Society.en_US
dc.identifier.doi10.1103/PhysRevB.44.5550en_US
dc.identifier.issn1631829
dc.identifier.urihttp://hdl.handle.net/11693/26192
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.44.5550en_US
dc.source.titlePhysical Review Ben_US
dc.titleStrain and dipole effects in covalent-polar semiconductor superlatticesen_US
dc.typeArticleen_US
relation.isAuthorOfPublication8c1d6866-696d-46a3-a77d-5da690629296

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