Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage3209en_US
dc.citation.issueNumber4en_US
dc.citation.spage3200en_US
dc.citation.volumeNumber28en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorÖztürk, M. K.en_US
dc.contributor.authorTıraş, E.en_US
dc.contributor.authorTıraş, T.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2018-04-12T11:14:19Z
dc.date.available2018-04-12T11:14:19Z
dc.date.issued2017en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractHigh-resistive GaN (>108 Ω cm) layers have been grown with different buffer structures on 6H-SiC substrate using metalorganic chemical vapor deposition reactor. Different combination of the GaN/AlN super lattice, low temperature AlN, high temperature AlN and AlxGa1−xN (x ≈ 0.67) layers were used in the buffer structures. The growth parameters of the buffer layers were optimized for obtaining a high-resistive GaN epilayer. The mosaic structure parameters, such as lateral and vertical coherence lengths, tilt and twist angle (and heterogeneous strain), and dislocation densities (edge and screw dislocations) of the high-resistive GaN epilayers have been investigated using x-ray diffraction measurements. In addition, the residual stress behaviors in the high-resistive GaN epilayers were determined using both x-ray diffraction and Raman measurements. It was found that the buffer structures between the HR-GaN and SiC substrate have been found to have significant effect on the surface morphology and the mosaic structures parameters. On the other hand, both XRD and Raman results confirmed that there is low residual stress in the high-resistive GaN epilayers grown on different buffer structures.en_US
dc.identifier.doi10.1007/s10854-016-5909-zen_US
dc.identifier.issn0957-4522
dc.identifier.urihttp://hdl.handle.net/11693/37470
dc.language.isoEnglishen_US
dc.publisherSpringer New York LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s10854-016-5909-zen_US
dc.source.titleJournal of Materials Science: Materials in Electronicsen_US
dc.subjectEdge dislocationsen_US
dc.subjectEpilayersen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectResidual stressesen_US
dc.subjectScrew dislocationsen_US
dc.subjectSilicon carbideen_US
dc.subjectTemperatureen_US
dc.subjectX ray diffractionen_US
dc.subjectBuffer structuresen_US
dc.subjectDislocation densitiesen_US
dc.subjectEdge and screw dislocationsen_US
dc.subjectGrowth parametersen_US
dc.subjectHeterogeneous strainen_US
dc.subjectRaman measurementsen_US
dc.subjectVertical coherenceen_US
dc.subjectX-ray diffraction measurementsen_US
dc.subjectGallium nitrideen_US
dc.titleBuffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVDen_US
dc.typeArticleen_US

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