Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity

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dc.citation.epage530en_US
dc.citation.issueNumber8en_US
dc.citation.spage525en_US
dc.citation.volumeNumber108en_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorSerpengüzel, A.en_US
dc.contributor.authorGürlü, O.en_US
dc.contributor.authorAydınlı, A.en_US
dc.contributor.authorYılmaz, I.en_US
dc.date.accessioned2016-02-08T10:43:57Z
dc.date.available2016-02-08T10:43:57Z
dc.date.issued1998en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is explained using the configuration coordinate model. The blue shift of the emission band peak energy and the sublinear increase of the emission band intensity with increasing excitation intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model. © 1998 Elsevier Science Ltd. All rights reserved.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:43:57Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1998en
dc.identifier.doi10.1016/S0038-1098(98)00396-2en_US
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/11693/25393
dc.language.isoEnglishen_US
dc.publisherPergamon Pressen_US
dc.relation.isversionofhttps://doi.org/10.1016/S0038-1098(98)00396-2en_US
dc.source.titleSolid State Communicationsen_US
dc.subjectA. semiconductorsen_US
dc.subjectD. optical propertiesen_US
dc.subjectE. luminescenceen_US
dc.subjectEmission spectroscopyen_US
dc.subjectOptical propertiesen_US
dc.subjectPhotoluminescenceen_US
dc.subjectQuenchingen_US
dc.subjectSingle crystalsen_US
dc.subjectThermal effectsen_US
dc.subjectEmission band intensityen_US
dc.subjectExcitation intensityen_US
dc.subjectThallium compoundsen_US
dc.titleDependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensityen_US
dc.typeArticleen_US

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