Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage56en_US
dc.citation.spage51en_US
dc.citation.volumeNumber100en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorÇakmak, H.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2018-04-12T13:45:05Z
dc.date.available2018-04-12T13:45:05Z
dc.date.issued2012-07-27en_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe current-transport mechanisms of the Pt contacts on p-InGaN and n-InGaN were investigated in a wide temperature range (80-360 K) and in the forward bias regime. It was found that the ideality factor (n) values and Schottky barrier heights (SBHs), as determined by thermionic emission (TE), were a strong function of temperature and Φb0 show the unusual behavior of increasing linearly with an increase in temperature from 80 to 360 K for both Schottky contacts. The tunneling saturation ( JTU(0)) and tunneling parameters (E 0) were calculated for both Schottky contacts. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. The results indicate that the dominant mechanism of the charge transport across the Pt/p-InGaN and Pt/n-InGaN Schottky contacts are electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-360 K.en_US
dc.identifier.doi10.1016/j.mee.2012.07.103en_US
dc.identifier.issn0167-9317
dc.identifier.urihttp://hdl.handle.net/11693/38126
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.mee.2012.07.103en_US
dc.source.titleMicroelectronic Engineeringen_US
dc.subjectInGaNen_US
dc.subjectMOCVDen_US
dc.subjectSchottkyen_US
dc.subjectTunnelingen_US
dc.subjectDeep-levelsen_US
dc.subjectDominant mechanismen_US
dc.subjectForward biasen_US
dc.subjectIdeality factorsen_US
dc.subjectInGaNen_US
dc.subjectp-InGaNen_US
dc.subjectSaturation currenten_US
dc.subjectSchottkyen_US
dc.subjectSchottky barrier heightsen_US
dc.subjectSchottky barriersen_US
dc.subjectSchottky contactsen_US
dc.subjectTemperature dependenceen_US
dc.subjectTemperature rangeen_US
dc.subjectTunneling currenten_US
dc.subjectTunneling parameteren_US
dc.subjectElectron tunnelingen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectPlatinumen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectThermionic emissionen_US
dc.subjectTunneling machinesen_US
dc.subjectGallium compoundsen_US
dc.titleForward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature rangeen_US
dc.typeReviewen_US

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