Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage88en_US
dc.citation.issueNumber1en_US
dc.citation.spage83en_US
dc.citation.volumeNumber16en_US
dc.contributor.authorOzturk, M. K.en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorKars, I.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T11:59:25Z
dc.date.available2015-07-28T11:59:25Z
dc.date.issued2013-02en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe strain analysis of GaN film on nitridated Si(111) substrate with different growth times between 0 and 660 s via metal organic chemical vapor deposition (MOCVD) was conducted based on the precise measurement of the lattice parameters by using high-resolution X-ray diffraction (HR-XRD). The nitridation time (NT) was changed at a fixed growth condition. The a- and c-lattice parameters were measured, followed by the in-plane and out-of-plane strains. Then, the biaxial and hydrostatic components were extracted from the total strain values obtained, and were then discussed in the present study as functions of the NT. The biaxial strain and stress are also strongly affected by the non-uniformity of the SiNx buffer layer thickness. Published by Elsevier Ltd.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T11:59:25Z (GMT). No. of bitstreams: 1 10.1016-j.mssp.2012.06.013.pdf: 440194 bytes, checksum: 105bfeae659c0c124b388b73487215b0 (MD5)en
dc.identifier.doi10.1016/j.mssp.2012.06.013en_US
dc.identifier.issn1369-8001
dc.identifier.urihttp://hdl.handle.net/11693/11954
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.mssp.2012.06.013en_US
dc.source.titleMaterials Science in Semiconductor Processingen_US
dc.subjectGanen_US
dc.subjectAln Layeren_US
dc.subjectMocvden_US
dc.subjectSilicon Substratesen_US
dc.subjectStrainen_US
dc.subjectNitridationen_US
dc.titleStrain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor depositionen_US
dc.typeArticleen_US

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