Location and visualization of working p-n and/or n-p junctions by XPS

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorSüzer, Şefik
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage9en_US
dc.citation.spage1en_US
dc.citation.volumeNumber6en_US
dc.contributor.authorCopuroglu, M.en_US
dc.contributor.authorCaliskan, D.en_US
dc.contributor.authorSezen, H.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorSüzer, Şefiken_US
dc.date.accessioned2018-04-12T10:49:19Z
dc.date.available2018-04-12T10:49:19Z
dc.date.issued2016en_US
dc.departmentDepartment of Chemistryen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractX-ray photoelectron spectroscopy (XPS) is used to follow some of the electrical properties of a segmented silicon photodetector, fabricated in a p-n-p configuration, during operation under various biasing configurations. Mapping of the binding energy position of Si2p reveals the shift in the position of the junctions with respect to the polarity of the DC bias applied. Use of squared and triangular shaped wave excitations, while recording XPS data, allows tapping different electrical properties of the device under normal operational conditions, as well as after exposing parts of it to harsh physical and chemical treatments. Unique and chemically specific electrical information can be gained with this noninvasive approach which can be useful especially for localized device characterization and failure analyses.en_US
dc.description.provenanceMade available in DSpace on 2018-04-12T10:49:19Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2016en
dc.identifier.doi10.1038/srep32482en_US
dc.identifier.issn2045-2322
dc.identifier.urihttp://hdl.handle.net/11693/36701
dc.language.isoEnglishen_US
dc.publisherNature Publishing Groupen_US
dc.relation.isversionofhttp://dx.doi.org/10.1038/srep32482en_US
dc.source.titleScientific Reportsen_US
dc.subjectMaterials scienceen_US
dc.subjectTechniques and instrumentationen_US
dc.titleLocation and visualization of working p-n and/or n-p junctions by XPSen_US
dc.typeArticleen_US

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