Plasmonically enhanced hot electorn based optoelectronic devices

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buir.advisorOkyay, Ali Kemal
dc.contributor.authorAtar, Fatih Bilge
dc.date.accessioned2016-04-28T08:08:27Z
dc.date.available2016-04-28T08:08:27Z
dc.date.copyright2015-06
dc.date.issued2015-06
dc.date.submitted09-07-2015
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (leaves 93-101).en_US
dc.descriptionThesis (Ph. D.): Bilkent University, Department of Electrical and Electronics Engineering, İhsan Doğramacı Bilkent University, 2015.en_US
dc.description.abstractHot electron based optoelectronic devices have been regarded as cost-e ective candidates to their conventional counterparts. The efficiency of conventional optoelectronic devices that rely on semiconductor photo-absorbers are mainly limited by the energy bandgap of the semiconductor. On the other hand, hot electron devices can overcome this limitation via the \internal photoemission" mechanism. Absorbed photons give their energy to free electrons of the metal and these high energy (\hot") electrons can be used to generate photocurrent in proper device configurations. High optical re ection from metals has remained as the main drawback of this photocurrent generation scheme but this problem has recently been addressed by the use of surface plasmons. Optical energy can be tightly confined to a metal layer or metal nanostructures in the form of surface plasmons, and the decay of surface plasmons in metals generates hot electrons. In this work, we study mechanisms of surface plasmon excitation, surface plasmon decay, hot electron generation and hot electron photoemission for photocurrent generation. We demonstrate novel device architectures and plasmon excitation structures. We demonstrate the use of such layers for plasmon enhanced hot electron based photodetectors and photovoltaic devices. A metal-semiconductor Schottky junction diode structure is used as hot electron photodetector. A double metal-insulator-metal (MIM) architecture is proposed as a hot electron photovoltaic device. Full wave electromagnetic simulations of these device structures are conducted to provide insight into the surface plasmon assisted hot electron generation process and give future directions in this field.en_US
dc.description.provenanceSubmitted by Betül Özen (ozen@bilkent.edu.tr) on 2016-04-28T08:08:27Z No. of bitstreams: 1 fatihBilgeAtarTez.pdf: 8992725 bytes, checksum: 18feface2032f51403abd64240b49418 (MD5)en
dc.description.provenanceMade available in DSpace on 2016-04-28T08:08:27Z (GMT). No. of bitstreams: 1 fatihBilgeAtarTez.pdf: 8992725 bytes, checksum: 18feface2032f51403abd64240b49418 (MD5) Previous issue date: 2015-06en
dc.description.statementofresponsibilityby Fatih Bilge Atar.en_US
dc.embargo.release2017-07-09
dc.format.extentxxi, 101 leaves : chartsen_US
dc.identifier.itemidB147807
dc.identifier.urihttp://hdl.handle.net/11693/29008
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectHot electronen_US
dc.subjectSurface plasmonen_US
dc.subjectOptoelectronicsen_US
dc.subjectInternal photoemissionen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotovoltaicsen_US
dc.titlePlasmonically enhanced hot electorn based optoelectronic devicesen_US
dc.title.alternativePlazmon destekli sıcak elektron tabanlı optoelektronik aygıtlaren_US
dc.typeThesisen_US
thesis.degree.disciplineElectrical and Electronic Engineering
thesis.degree.grantorBilkent University
thesis.degree.levelDoctoral
thesis.degree.namePh.D. (Doctor of Philosophy)

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