Gain measurements via spontaneous emission in quantum well semiconductor lasers

buir.advisorAydınlı, Atilla
dc.contributor.authorAzfar, Talal
dc.date.accessioned2016-01-08T20:13:52Z
dc.date.available2016-01-08T20:13:52Z
dc.date.issued1996
dc.departmentDepartment of Physicsen_US
dc.descriptionAnkara : Department of Physics and Institute of Engineering and Science, Bilkent Univ., 1996.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 1996.en_US
dc.descriptionIncludes bibliographical references leaves 75-80.en_US
dc.description.abstract111 this work ail analysis of gain in single c|iianliini well last'rs as a riinction of sonu' of llu'ir o|)(M’alioiial paranu'l('rs is earrii'd oiil. I^'irsl, a 1 li('or('liea.l inodi'l of gain is |)resent('d. 'riuMi two diderent nudliods of gain iiK'asiir('in('nt, wliieli iis(' the spontaneous emission IVom the iaec't and the nnamplified s[)ontan('ons ('mission from the top of the ridg(', arc' discussed. Indirication procc'sses of lasers to racilitate tJie colh'clion of unampliiic'd spontaiK'ous ('mission are ch'tailed. R('S|)onse of the gain sp('ctrum to chang('s in inject('d cnrr('nt (h'lisity and temperature are measur('d and iinderstood in terms of hand Idling, hand gap renormalization and tenpx'rature d('pendenc(' of tlu' handgap. (!ain sainration above threshold is v('ri(ied and s|)atial variations in spontaiu'ons ('mission in lh(' longitiidnal and hiteral directions are observed.en_US
dc.description.degreeM.S.en_US
dc.description.statementofresponsibilityAzfar, Talalen_US
dc.format.extentvii, 80 leavesen_US
dc.identifier.urihttp://hdl.handle.net/11693/17836
dc.language.isoEnglishen_US
dc.publisherBilkent Universityen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectQuantum wellen_US
dc.subjectsemiconductor laseren_US
dc.subjectgainen_US
dc.subjectspontaneous emissionen_US
dc.subject.lccTA1700 .A94 1996en_US
dc.subject.lcshSemiconductor lasers.en_US
dc.titleGain measurements via spontaneous emission in quantum well semiconductor lasersen_US
dc.typeThesisen_US

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