Fabrication, modeling and characterization of GaN HEMTs, and design of high power MMIC amplifiers

Simple item page
buir.advisorÖzbay, Ekmel
dc.contributor.authorAcar, Muhammed A.
dc.date.accessioned2016-01-08T18:11:38Z
dc.date.available2016-01-08T18:11:38Z
dc.date.issued2009
dc.descriptionCataloged from PDF version of article.en_US
dc.descriptionIncludes bibliographical references leaves 154-160.en_US
dc.description.statementofresponsibilityAcar, Muhammed Aen_US
dc.format.extentxvii, 160 leaves, illustrationsen_US
dc.identifier.itemidB120043
dc.identifier.urihttp://hdl.handle.net/11693/14970
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subject.lccTK7871.2 .A33 2009en_US
dc.subject.lcshMicrowave amplifiers--Design and construction--Data processing.en_US
dc.subject.lcshMicrowave integrated circuits--Design and construction--Data processing.en_US
dc.subject.lcshPower amplifiers--Design and construction--Data processing.en_US
dc.subject.lcshGallium arsenide semiconductors.en_US
dc.titleFabrication, modeling and characterization of GaN HEMTs, and design of high power MMIC amplifiersen_US
dc.typeThesisen_US
thesis.degree.disciplineElectrical and Electronic Engineering
thesis.degree.grantorBilkent University
thesis.degree.levelMaster's
thesis.degree.nameMS (Master of Science)

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
0003939.pdf
Size:
7.4 MB
Format:
Adobe Portable Document Format
Download

Collections

Graduate School of Engineering and Science