Slicing crystalline silicon wafer by deep subsurface laser processing and selective chemical etching

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buir.contributor.authorTurnalı, Ahmet
buir.contributor.authorTokel, Onur
buir.contributor.authorİlday, Fatih Ömer
buir.contributor.authorDeminskyi, Petro
dc.contributor.authorBorra, M. Z.en_US
dc.contributor.authorNasser, H.en_US
dc.contributor.authorÇiftpınar, E. H.en_US
dc.contributor.authorTurnalı, Ahmeten_US
dc.contributor.authorDeminskyi, Petroen_US
dc.contributor.authorÇolakoğlu, T.en_US
dc.contributor.authorTokel, Onuren_US
dc.contributor.authorİlday, Fatih Ömeren_US
dc.contributor.authorPavlov, I.en_US
dc.contributor.authorTuran, R.en_US
dc.contributor.authorBek, A.en_US
dc.coverage.spatialMunich, Germanyen_US
dc.date.accessioned2020-01-28T05:37:04Zen_US
dc.date.available2020-01-28T05:37:04Zen_US
dc.date.issued2019en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionDate of Conference: 23-27 June 2019en_US
dc.descriptionConference Name: 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019en_US
dc.description.abstractIn this work, we demonstrate use of laser-induced silicon slicing (LASIS) technique to fabricate crystalline silicon (c-Si) slices [1]. In LASIS method, a nanosecond-pulsed fiber laser operating at 1.55 μm wavelength, focused deep in Si subsurface induces structural modifications near the focal point due to multiphoton absorption. The raster scan of the focal position inside of the sample, positioned in cross-sectional plane with respect to laser beam, produces a quasi-2D modified Si region. The modified Si region is then etched by cupper nitrite (Cu(NO 3 ) 2 )-based selective chemical etchant which selectively targets the laser-modified regions. In order to achieve high etch rate, smooth and defect-free surface; different concentrations of etchant components and etch durations were investigated.en_US
dc.description.sponsorshipEPS Young Mindsen_US
dc.description.sponsorshipQuantum Electronics and Optics Divisionen_US
dc.identifier.doi10.1109/CLEOE-EQEC.2019.8872359en_US
dc.identifier.eisbn9781728104690en_US
dc.identifier.isbn9781728104706en_US
dc.identifier.urihttp://hdl.handle.net/11693/52846en_US
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.isversionofhttps://dx.doi.org/10.1109/CLEOE-EQEC.2019.8872359en_US
dc.source.title2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019en_US
dc.subjectSiliconen_US
dc.subjectEtchingen_US
dc.subjectHafniumen_US
dc.subjectChemical lasersen_US
dc.subjectPhysicsen_US
dc.subjectFiber lasersen_US
dc.titleSlicing crystalline silicon wafer by deep subsurface laser processing and selective chemical etchingen_US
dc.typeConference Paperen_US

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