Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage1605en_US
dc.citation.issueNumber6en_US
dc.citation.spage1600en_US
dc.citation.volumeNumber12en_US
dc.contributor.authorKelekci, O.en_US
dc.contributor.authorTasli, P.en_US
dc.contributor.authorCetin, S. S.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:44:12Z
dc.date.available2016-02-08T09:44:12Z
dc.date.issued2012-06-01en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractWe investigate the structural and electrical properties of Al xIn 1-xN/AlN/GaN heterostructures with AlGaN buffers grown by MOCVD, which can be used as an alternative to AlInN HEMT structures with GaN buffer. The effects of the GaN channel thickness and the addition of a content graded AlGaN layer to the structural and electrical characteristics were studied through variable temperature Hall effect measurements, high resolution XRD, and AFM measurements. Enhancement in electron mobility was observed in two of the suggested Al xIn 1 -xN/AlN/GaN/Al 0.04Ga 0.96N heterostructures when compared to the standard Al xIn 1 -xN/AlN/GaN heterostructure. This improvement was attributed to better electron confinement in the channel due to electric field arising from piezoelectric polarization charge at the Al 0.04Ga 0.96N/GaN heterointerface and by the conduction band discontinuity formed at the same interface. If the growth conditions and design parameters of the Al xIn 1-xN HEMT structures with AlGaN buffers can be modified further, the electron spillover from the GaN channel can be significantly limited and even higher electron mobilities, which result in lower two-dimensional sheet resistances, would be possible.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:44:12Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2012en
dc.identifier.doi10.1016/j.cap.2012.05.040en_US
dc.identifier.issn1567-1739
dc.identifier.urihttp://hdl.handle.net/11693/21283
dc.language.isoEnglishen_US
dc.publisherELSEVIERen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.cap.2012.05.040en_US
dc.source.titleCurrent Applied Physicsen_US
dc.subjectElectrical transporten_US
dc.subjectElectronic band structureen_US
dc.subjectNitride materialsen_US
dc.titleInvestigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVDen_US
dc.typeArticleen_US

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