High-speed characterization of solar-blind AlxGa 1-xN p-i-n photodiodes
Date
2004
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Abstract
We report on the temporal pulse response measurements of solar-blind AlxGa1-xN-based heterojunction p-i-n photodiodes. High-speed characterization of the fabricated photodiodes was carried out at 267 nm. The bandwidth performance was enhanced by an order of magnitude with the removal of the absorbing p+ GaN cap layer. 30 μm diameter devices exhibited pulse responses with ∼70 ps pulse width and a corresponding 3 dB bandwidth of 1.65 GHz.
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Semiconductor Science and Technology
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Institute of Physics
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Aluminum compounds, Crystal structure, Doping (additives), Etching, Fast Fourier transforms, Heterojunctions, Metallorganic chemical vapor deposition, Plasma enhanced chemical vapor deposition, Sapphire, Scanning electron microscopy, Carrier diffusion, Harmonic beams, Reactive ion etching (RIE), Photodiodes
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English