An S-Band high gain AlGaN/GaN HEMT MMIC low noise amplifier

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buir.contributor.authorMuhittin, Tasçı
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage456en_US
dc.citation.spage453en_US
dc.contributor.authorMuhittin, Tasçıen_US
dc.contributor.authorŞen, Ö.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialPrague, Czech Republicen_US
dc.date.accessioned2020-01-24T06:42:21Z
dc.date.available2020-01-24T06:42:21Z
dc.date.issued2019
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 13-15 May 2019en_US
dc.descriptionConference name:European Microwave Conference in Central Europe (EuMCE), Proceedings of the 1st European Microwave Conference in Central Europeen_US
dc.description.abstractIn this paper design, fabrication and measurement of a GaN HEMT based Monolithic Microwave Integrated Circuit (MMIC) Low Noise Amplifier (LNA) is presented. 12-Term equivalent circuit modeling is exacuted. Inductive source feedback topology is used to obtain low Noise Figure (NF) with appropriate input return loss. The gain of this design is higher than 25 dB, input return loss is better than 13 dB and NF value is 1.6 dB in S band. This work is only 3 x 5 mm. LNA has 28.1 dBm output third-order intercept point. Output power at 1-dB compression point is 18.2 dBm. Group delay is less than 0.3 nanoseconds. Due to superior properties of GaN technology, without NF performance degradation GaN LNA enables to high input power handling (P in is 20 dBm, CW, 10 mins).en_US
dc.identifier.isbn9782874870675
dc.identifier.urihttp://hdl.handle.net/11693/52793
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.source.title2019 European Microwave Conference in Central Europe (EuMCE)en_US
dc.subjectLow noise amplifieren_US
dc.subjectSurvivabilityen_US
dc.subjectHigh Gainen_US
dc.subjectAlGaN/GaN HEMTen_US
dc.subjectGaN MMICen_US
dc.subjectT-gateen_US
dc.subjectHEMT Modelingen_US
dc.subjectIntermodulation distortionen_US
dc.titleAn S-Band high gain AlGaN/GaN HEMT MMIC low noise amplifieren_US
dc.typeConference Paperen_US

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