Optimizing CMUT geometry for high power

buir.contributor.authorAtalar, Abdullah
buir.contributor.authorKöymen, Hayrettin
buir.contributor.orcidAtalar, Abdullah|0000-0002-1903-1240
dc.citation.epage2250en_US
dc.citation.spage2247en_US
dc.contributor.authorYamaner F.Y.en_US
dc.contributor.authorOlcum, Selimen_US
dc.contributor.authorBozkurt, A.en_US
dc.contributor.authorKöymen, Hayrettinen_US
dc.contributor.authorAtalar, Abdullahen_US
dc.coverage.spatialSan Diego, CA, USAen_US
dc.date.accessioned2016-02-08T12:21:29Z
dc.date.available2016-02-08T12:21:29Z
dc.date.issued2010en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 11-14 Oct. 2010en_US
dc.description.abstractCapacitive micromachined ultrasonic transducers (CMUTs) have demonstratedvarious advantages over piezoelectric transducers. However, current CMUT designsproduce low output pressures with high harmonic distortions. Optimizing thetransducer parameters requires an iterative solution and is too time consumingusing finite element (FEM) modelling tools. In this work, we present a method ofdesigning high output pressure CMUTs with relatively low distortion. We analyzethe behavior of a membrane under high voltage continuous wave operation using anonlinear electrical circuit model. The radiation impedance of an array ofCMUTs is accurately represented using an RLC circuit in the model. The maximummembrane swing without collapse is targeted in the transmit mode. Using SPICEsimulation of the parametric circuit model, we design the CMUT cell withoptimized parameters such as the membrane radius (a), thickness (tm),insulator thickness (ti) and gap height (tg). The modelalso predicts the amount of second harmonic at the output. To verify theaccuracy of the results, we built a FEM model with the same CMUT parameters. Thedesign starts by choosing ti for the given input voltage level.First, a is selected for the maximum radiation resistance of the array at theoperating frequency. Second, tm is found for the resonance at theinput frequency. Third, tg is chosen for the maximum membrane swing.Under this condition, a frequency shift in the resonant frequency occurs. Secondand third steps are repeated until convergence. This method results in a CMUTarray with a high output power and with low distortion. © 2010 IEEE.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:21:29Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2010en
dc.identifier.doi10.1109/ULTSYM.2010.5935942en_US
dc.identifier.issn1051-0117
dc.identifier.urihttp://hdl.handle.net/11693/28468
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/ULTSYM.2010.5935942en_US
dc.source.title2010 IEEE International Ultrasonics Symposiumen_US
dc.subjectCapacitive micromachined ultrasonic transduceren_US
dc.subjectCircuit modelsen_US
dc.subjectContinuous wave operationen_US
dc.subjectElectrical circuit modelsen_US
dc.subjectFEM modelsen_US
dc.subjectFinite elementsen_US
dc.subjectFrequency shiften_US
dc.subjectGap heighten_US
dc.subjectHigh outputen_US
dc.subjectHigh output poweren_US
dc.subjectHigh voltageen_US
dc.subjectHigh-poweren_US
dc.subjectInput voltagesen_US
dc.subjectInsulator thicknessen_US
dc.subjectIterative solutionsen_US
dc.subjectLow distortionen_US
dc.subjectModelling toolsen_US
dc.subjectRadiation impedanceen_US
dc.subjectRadiation resistanceen_US
dc.subjectRLC circuiten_US
dc.subjectSecond harmonicsen_US
dc.subjectTransmit-modeen_US
dc.subjectCircuit theoryen_US
dc.subjectNatural frequenciesen_US
dc.subjectOptimizationen_US
dc.subjectTransducersen_US
dc.subjectUltrasonicsen_US
dc.subjectUltrasonic transducersen_US
dc.titleOptimizing CMUT geometry for high poweren_US
dc.typeConference Paperen_US

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