Plasmonic nanoslit array enhanced metal-semiconductor-metal optical detectors
buir.contributor.author | Okyay, Ali Kemal | |
dc.citation.epage | 550 | en_US |
dc.citation.issueNumber | 7 | en_US |
dc.citation.spage | 548 | en_US |
dc.citation.volumeNumber | 24 | en_US |
dc.contributor.author | Eryilmaz, S. B. | en_US |
dc.contributor.author | Tidin, O. | en_US |
dc.contributor.author | Okyay, Ali Kemal | en_US |
dc.date.accessioned | 2016-02-08T09:47:46Z | |
dc.date.available | 2016-02-08T09:47:46Z | |
dc.date.issued | 2012-01-09 | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.description.abstract | Metallic nanoslit arrays integrated on germanium metal-semiconductor-metal photodetectors show many folds of absorption enhancement for transverse-magnetic polarization in the telecommunication C-band. Such high enhancement is attributed to resonant interference of surface plasmon modes at the metal-semiconductor interface. Horizontal surface plasmon modes were reported earlier to inhibit photodetector performance. We computationally show, however, that horizontal modes enhance the efficiency of surface devices despite reducing transmitted light in the far field. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T09:47:46Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2012 | en |
dc.identifier.doi | 10.1109/LPT.2012.2183342 | en_US |
dc.identifier.issn | 1041-1135 | |
dc.identifier.uri | http://hdl.handle.net/11693/21539 | |
dc.language.iso | English | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/LPT.2012.2183342 | en_US |
dc.source.title | IEEE Photonics Technology Letters | en_US |
dc.subject | Photodetectors | en_US |
dc.subject | Plasmons | en_US |
dc.subject | Silicon germanium | en_US |
dc.subject | Absorption enhancement | en_US |
dc.subject | Far field | en_US |
dc.subject | Horizontal surfaces | en_US |
dc.subject | Metal semiconductor interface | en_US |
dc.subject | Metal semiconductor metal | en_US |
dc.subject | Metal semiconductor metal photodetector | en_US |
dc.subject | Metallic nanoslit arrays | en_US |
dc.subject | Nanoslits | en_US |
dc.subject | Optical detectors | en_US |
dc.subject | Plasmonic | en_US |
dc.subject | Silicon germanium | en_US |
dc.subject | Surface device | en_US |
dc.subject | Surface plasmon modes | en_US |
dc.subject | Transmitted light | en_US |
dc.subject | Germanium | en_US |
dc.subject | Photodetectors | en_US |
dc.subject | Plasmons | en_US |
dc.title | Plasmonic nanoslit array enhanced metal-semiconductor-metal optical detectors | en_US |
dc.type | Article | en_US |
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