Silicon carbide high voltage devices

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buir.advisorÖzbay, Ekmel
dc.contributor.authorKazar, Özgür
dc.date.accessioned2016-01-08T18:15:51Z
dc.date.available2016-01-08T18:15:51Z
dc.date.issued2011
dc.descriptionCataloged from PDF version of article.en_US
dc.descriptionIncludes bibliographical references leaves 51-55.en_US
dc.description.statementofresponsibilityKazar, Özgüren_US
dc.format.extentxii, 55 leaves, illustrationsen_US
dc.identifier.urihttp://hdl.handle.net/11693/15268
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSilicon Carbideen_US
dc.subjectSchottky diodeen_US
dc.subjectPiN diodeen_US
dc.subjecthigh breakdown electric field strengthen_US
dc.subjectSchottky contacten_US
dc.subjecton-state voltage and resistanceen_US
dc.subjectcapacitanceen_US
dc.subjectswitching diodeen_US
dc.subject.lccTK7871.15.S56 K39 2011en_US
dc.subject.lcshSilicon carbide.en_US
dc.subject.lcshPower electronics.en_US
dc.subject.lcshDiodes, Schottky-barrier.en_US
dc.titleSilicon carbide high voltage devicesen_US
dc.typeThesisen_US
thesis.degree.disciplineElectrical and Electronic Engineering
thesis.degree.grantorBilkent University
thesis.degree.levelMaster's
thesis.degree.nameMS (Master of Science)

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