Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage92en_US
dc.citation.spage87en_US
dc.citation.volumeNumber63en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorAtmaca, G.en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorÇakmakyapan S.en_US
dc.contributor.authorKazar, Ö.en_US
dc.contributor.authorBütün, S.en_US
dc.contributor.authorUl-Hassan, J.en_US
dc.contributor.authorJanzén, E.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T12:01:18Z
dc.date.available2015-07-28T12:01:18Z
dc.date.issued2014-09en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractHall effect measurements of a graphene-on-SiC system were carried out as a function of temperature (1.8-200 K) at a static magnetic field (0.51) With the analysis of temperature dependent single-field Hall data with the Simple Parallel Conduction Extraction Method (SPCEM), bulk and two-dimensional (2D) carrier densities and mobilities were extracted successfully. Bulk carrier is attributed to SIC substrate and 2D carrier is attributed to the graphene layer. For each SPCEM extracted carrier data, relevant three-dimensional or 2D scattering analyses were performed. Each SPCEM extracted carrier data were explained with the related scattering analyses. A temperature independent mobility component, which may related to an interaction between graphene and SIC, was observed for both scattering analyses with the same mobility limiting value. With the SPCEM, effective ionized impurity concentration of SiC substrate, extracted 2D-mobility, and sheet carrier density of the graphene layer are calculated with using temperature dependent static magnetic field Hall data. (c) 2014 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physe.2014.05.016en_US
dc.identifier.issn1386-9477
dc.identifier.urihttp://hdl.handle.net/11693/12407
dc.language.isoEnglishen_US
dc.publisherElsevier BVen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.physe.2014.05.016en_US
dc.source.titlePhysica E: Low-Dimensional Systems and Nanostructuresen_US
dc.subjectGrapheneen_US
dc.subject2-dimensionalen_US
dc.subjectSiCen_US
dc.subjectHall effecten_US
dc.subjectScattering mechanismen_US
dc.titleExtraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structureen_US
dc.typeArticleen_US

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